Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy ... View Full Text


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Article Info

DATE

2013-10

AUTHORS

E. V. Lutsenko, N. V. Rzheutskii, V. N. Pavlovskii, G. P. Yablonskii, D. V. Nechaev, A. A. Sitnikova, V. V. Ratnikov, Ya. V. Kuznetsova, V. N. Zhmerik, S. V. Ivanov

ABSTRACT

This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/cm2, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. More... »

PAGES

2173-2181

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378341310020x

DOI

http://dx.doi.org/10.1134/s106378341310020x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053033766


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