Growth specifics of GaAs nanowires in mesa View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-04-17

AUTHORS

I. P. Soshnikov, V. A. Petrov, G. E. Cirlin, Yu. B. Samsonenko, A. D. Bouravlev, Yu. M. Zadiranov, N. D. Il’inskaya, S. I. Troshkov

ABSTRACT

The possibility of epitaxial growth of nanowire arrays on tilted faces of linear mesa has been demonstrated. The structural properties of GaAs nanowires grown on (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$33\bar 1$\end{document}), (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$11\bar 7$\end{document}), and (113) faces of samples with the (100) crystallographic orientation of the substrate have been studied. It has been found that there is a relation between the structural parameters of nanowires and the geometric orientation of the growth surface relative to the 〈111〉 directions and the surface of the substrate. More... »

PAGES

702-706

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378341304029x

DOI

http://dx.doi.org/10.1134/s106378341304029x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1040415001


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