Field injection of low-energy electrons into the ZnSe/CdSe/ZnSe heterostructure with the use of an ultra-high-vacuum tunneling microscope View Full Text


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Article Info

DATE

2012-06-06

AUTHORS

S. A. Masalov, K. V. Kalinina, V. P. Evtikhiev, S. V. Ivanov

ABSTRACT

The field emission injection of low-energy electrons (Ee ≈ 10 eV) into the ZnSe/CdSe/ZnSe heterostructure has been considered. The probe of the ultra-high-vacuum tunneling microscope has been used as a field emitter. It has been shown that the energy of injected electrons is sufficient for impact ionization in ZnSe. The impact ionization creates a high concentration of nonequilibrium carriers in the near-surface ZnSe layer. The transport of nonequilibrium carriers in the heterostructure under study has been simulated. The electric field of the near-surface space charge and surface recombination have been taken into account. The calculation has demonstrated that filling the active region of CdSe with nonequilibrium carriers is highly efficient. More... »

PAGES

1126-1130

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783412060236

DOI

http://dx.doi.org/10.1134/s1063783412060236

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1045304313


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