Diffusion in porous silicon carbide View Full Text


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Article Info

DATE

2011-05-06

AUTHORS

E. L. Pankratov, M. G. Mynbaeva, E. N. Mokhov, K. D. Mynbaev

ABSTRACT

By the example of vanadium and erbium diffusion in porous silicon carbide, the semiconductor porous structure modification during thermal annealing has been simulated and the effect of this modification on impurity diffusion has been considered. A comparison of calculated and experimental profiles of the erbium and vanadium distributions in porous silicon carbide shows that the consideration of porous structure modification due to vacancy redistribution makes it possible to adequately describe diffusion in the porous semiconductor. More... »

PAGES

943-949

References to SciGraph publications

  • 2007-06-22. Dynamics of δ-dopant redistribution during heterostructure growth in THE EUROPEAN PHYSICAL JOURNAL B
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063783411050222

    DOI

    http://dx.doi.org/10.1134/s1063783411050222

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1040974698


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