Influence of delta〈Mn〉 doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2010-11-17

AUTHORS

M. V. Dorokhin, S. V. Zaĭtsev, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskiĭ, M. M. Prokof’eva, A. E. Sholina

ABSTRACT

The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a delta〈Mn〉 layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the delta〈Mn〉 layer and the quantum well, atomic concentration in the delta〈Mn〉 layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence. More... »

PAGES

2291-2296

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783410110144

DOI

http://dx.doi.org/10.1134/s1063783410110144

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1023664567


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Dorokhin", 
        "givenName": "M. V.", 
        "id": "sg:person.013277464553.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013277464553.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.418975.6", 
          "name": [
            "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Za\u012dtsev", 
        "givenName": "S. V.", 
        "id": "sg:person.011610151633.09", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011610151633.09"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.418975.6", 
          "name": [
            "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brichkin", 
        "givenName": "A. S.", 
        "id": "sg:person.012567653177.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012567653177.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vikhrova", 
        "givenName": "O. V.", 
        "id": "sg:person.0633161363.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0633161363.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Danilov", 
        "givenName": "Yu. A.", 
        "id": "sg:person.012366717075.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012366717075.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zvonkov", 
        "givenName": "B. N.", 
        "id": "sg:person.01063636363.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063636363.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.418975.6", 
          "name": [
            "Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kulakovski\u012d", 
        "givenName": "V. D.", 
        "id": "sg:person.01027072451.00", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01027072451.00"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Prokof\u2019eva", 
        "givenName": "M. M.", 
        "id": "sg:person.07620770414.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07620770414.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia", 
          "id": "http://www.grid.ac/institutes/grid.28171.3d", 
          "name": [
            "Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sholina", 
        "givenName": "A. E.", 
        "id": "sg:person.016000442131.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016000442131.50"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2010-11-17", 
    "datePublishedReg": "2010-11-17", 
    "description": "The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a delta\u3008Mn\u3009 layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the delta\u3008Mn\u3009 layer and the quantum well, atomic concentration in the delta\u3008Mn\u3009 layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063783410110144", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136591", 
        "issn": [
          "0367-3294", 
          "1063-7834"
        ], 
        "name": "Physics of the Solid State", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "11", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "keywords": [
      "main structural parameters", 
      "layer thickness", 
      "GaAs/InGaAs heterostructures", 
      "low-temperature electroluminescence", 
      "spacer layer thickness", 
      "InGaAs/GaAs", 
      "InGaAs heterostructures", 
      "electroluminescence", 
      "heterostructures", 
      "diodes", 
      "structural parameters", 
      "GaAs barrier", 
      "circular polarization", 
      "effective method", 
      "polarization", 
      "layer", 
      "thickness", 
      "undoped quantum", 
      "parameters", 
      "GaAs", 
      "influence", 
      "method", 
      "barriers", 
      "degree", 
      "variation", 
      "luminescence", 
      "possibility", 
      "quantum"
    ], 
    "name": "Influence of delta\u3008Mn\u3009 doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures", 
    "pagination": "2291-2296", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1023664567"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063783410110144"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063783410110144", 
      "https://app.dimensions.ai/details/publication/pub.1023664567"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:22", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_510.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063783410110144"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063783410110144'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063783410110144'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063783410110144'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063783410110144'


 

This table displays all metadata directly associated to this object as RDF triples.

145 TRIPLES      21 PREDICATES      53 URIs      45 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063783410110144 schema:about anzsrc-for:02
2 anzsrc-for:0206
3 schema:author Nfb163a5ef11049ba866e955e9169000f
4 schema:datePublished 2010-11-17
5 schema:datePublishedReg 2010-11-17
6 schema:description The circular polarization of low-temperature electroluminescence of diodes based on heterostructures with an undoped quantum well InGaAs/GaAs and a delta〈Mn〉 layer in the GaAs barrier has been investigated. The possibility of changing the degree of circular polarization of the electroluminescence by varying the main structural parameters of diodes (spacer layer thickness, i.e., the distance between the delta〈Mn〉 layer and the quantum well, atomic concentration in the delta〈Mn〉 layer, and introduction of an additional acceptor delta layer) has been analyzed. It has been revealed that the variation in the spacer layer thickness is the most effective method for controlling the degree of circular polarization of the electroluminescence.
7 schema:genre article
8 schema:inLanguage en
9 schema:isAccessibleForFree false
10 schema:isPartOf N537cb94f889b4200ac917f45c5d22b85
11 N9c71010ab20a4f8faf76e4753feb5db9
12 sg:journal.1136591
13 schema:keywords GaAs
14 GaAs barrier
15 GaAs/InGaAs heterostructures
16 InGaAs heterostructures
17 InGaAs/GaAs
18 barriers
19 circular polarization
20 degree
21 diodes
22 effective method
23 electroluminescence
24 heterostructures
25 influence
26 layer
27 layer thickness
28 low-temperature electroluminescence
29 luminescence
30 main structural parameters
31 method
32 parameters
33 polarization
34 possibility
35 quantum
36 spacer layer thickness
37 structural parameters
38 thickness
39 undoped quantum
40 variation
41 schema:name Influence of delta〈Mn〉 doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures
42 schema:pagination 2291-2296
43 schema:productId N2f2b8a1898cd4120a6aabe26b0122cbd
44 N73675dd41cfb460394d72bf1a3d7835a
45 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023664567
46 https://doi.org/10.1134/s1063783410110144
47 schema:sdDatePublished 2022-01-01T18:22
48 schema:sdLicense https://scigraph.springernature.com/explorer/license/
49 schema:sdPublisher Nc3a068ceef69456483c8556610db34fd
50 schema:url https://doi.org/10.1134/s1063783410110144
51 sgo:license sg:explorer/license/
52 sgo:sdDataset articles
53 rdf:type schema:ScholarlyArticle
54 N18191db82a4f4c48950b3adc971bdf46 rdf:first sg:person.011610151633.09
55 rdf:rest Nb30739c3db9146c8a7e7df32c452373d
56 N2f2b8a1898cd4120a6aabe26b0122cbd schema:name dimensions_id
57 schema:value pub.1023664567
58 rdf:type schema:PropertyValue
59 N2f3cadbf1a5e424793f883299960d28e rdf:first sg:person.07620770414.90
60 rdf:rest N7a271ff0a89a4b0d9258d400857477e7
61 N537cb94f889b4200ac917f45c5d22b85 schema:volumeNumber 52
62 rdf:type schema:PublicationVolume
63 N6ad0363c4fcd441db2d7799d5cd2dc2a rdf:first sg:person.0633161363.08
64 rdf:rest Nbeadb81206e345e2be7664d5e031fe6d
65 N73675dd41cfb460394d72bf1a3d7835a schema:name doi
66 schema:value 10.1134/s1063783410110144
67 rdf:type schema:PropertyValue
68 N7a271ff0a89a4b0d9258d400857477e7 rdf:first sg:person.016000442131.50
69 rdf:rest rdf:nil
70 N9a13c3b338b44e1882535ac365529c1e rdf:first sg:person.01027072451.00
71 rdf:rest N2f3cadbf1a5e424793f883299960d28e
72 N9c71010ab20a4f8faf76e4753feb5db9 schema:issueNumber 11
73 rdf:type schema:PublicationIssue
74 Nb30739c3db9146c8a7e7df32c452373d rdf:first sg:person.012567653177.24
75 rdf:rest N6ad0363c4fcd441db2d7799d5cd2dc2a
76 Nbeadb81206e345e2be7664d5e031fe6d rdf:first sg:person.012366717075.23
77 rdf:rest Ncfcf01e24b324d75904c921823364a13
78 Nc3a068ceef69456483c8556610db34fd schema:name Springer Nature - SN SciGraph project
79 rdf:type schema:Organization
80 Ncfcf01e24b324d75904c921823364a13 rdf:first sg:person.01063636363.73
81 rdf:rest N9a13c3b338b44e1882535ac365529c1e
82 Nfb163a5ef11049ba866e955e9169000f rdf:first sg:person.013277464553.77
83 rdf:rest N18191db82a4f4c48950b3adc971bdf46
84 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
85 schema:name Physical Sciences
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
88 schema:name Quantum Physics
89 rdf:type schema:DefinedTerm
90 sg:journal.1136591 schema:issn 0367-3294
91 1063-7834
92 schema:name Physics of the Solid State
93 schema:publisher Pleiades Publishing
94 rdf:type schema:Periodical
95 sg:person.01027072451.00 schema:affiliation grid-institutes:grid.418975.6
96 schema:familyName Kulakovskiĭ
97 schema:givenName V. D.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01027072451.00
99 rdf:type schema:Person
100 sg:person.01063636363.73 schema:affiliation grid-institutes:grid.28171.3d
101 schema:familyName Zvonkov
102 schema:givenName B. N.
103 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01063636363.73
104 rdf:type schema:Person
105 sg:person.011610151633.09 schema:affiliation grid-institutes:grid.418975.6
106 schema:familyName Zaĭtsev
107 schema:givenName S. V.
108 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011610151633.09
109 rdf:type schema:Person
110 sg:person.012366717075.23 schema:affiliation grid-institutes:grid.28171.3d
111 schema:familyName Danilov
112 schema:givenName Yu. A.
113 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012366717075.23
114 rdf:type schema:Person
115 sg:person.012567653177.24 schema:affiliation grid-institutes:grid.418975.6
116 schema:familyName Brichkin
117 schema:givenName A. S.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012567653177.24
119 rdf:type schema:Person
120 sg:person.013277464553.77 schema:affiliation grid-institutes:grid.28171.3d
121 schema:familyName Dorokhin
122 schema:givenName M. V.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013277464553.77
124 rdf:type schema:Person
125 sg:person.016000442131.50 schema:affiliation grid-institutes:grid.28171.3d
126 schema:familyName Sholina
127 schema:givenName A. E.
128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016000442131.50
129 rdf:type schema:Person
130 sg:person.0633161363.08 schema:affiliation grid-institutes:grid.28171.3d
131 schema:familyName Vikhrova
132 schema:givenName O. V.
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0633161363.08
134 rdf:type schema:Person
135 sg:person.07620770414.90 schema:affiliation grid-institutes:grid.28171.3d
136 schema:familyName Prokof’eva
137 schema:givenName M. M.
138 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07620770414.90
139 rdf:type schema:Person
140 grid-institutes:grid.28171.3d schema:alternateName Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia
141 schema:name Physical-Technical Research Institute of University of Nizhni Novgorod, pr. Gagarina 23/3, 603950, Nizhni Novgorod, Russia
142 rdf:type schema:Organization
143 grid-institutes:grid.418975.6 schema:alternateName Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia
144 schema:name Institute of Solid State Physics, Russian Academy of Sciences, ul. Institutskaya 2, 142432, Chernogolovka, Moscow oblast, Russia
145 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...