Experimental determination of dead layer thickness for excitons in a wide GaAs/AlGaAs quantum well View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-09

AUTHORS

E. V. Ubyĭvovk, D. K. Loginov, I. Ya. Gerlovin, Yu. K. Dolgikh, Yu. P. Efimov, S. A. Eliseev, V. V. Petrov, O. F. Vyvenko, A. A. Sitnikova, D. A. Kirilenko

ABSTRACT

The thickness of the GaAs “dead layer” in the GaAs/AlGaAs heterostructure has been directly measured. The widths of the dead layer obtained in the experiment are compared with the values for the same material interfacing with the external medium which were found earlier, as well as with theoretical predictions made by different authors. More... »

PAGES

1929-1934

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783409090273

DOI

http://dx.doi.org/10.1134/s1063783409090273

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037261010


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