Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2009-08

AUTHORS

S. O. Usov, A. F. Tsatsul’nikov, E. E. Zavarin, R. N. Kyutt, N. N. Ledentsov

ABSTRACT

Multilayer structures based on the InxGa1 − xN/GaN compounds grown by gas-phase epitaxy from organometallic compounds are studied using photoluminescence spectroscopy and high-resolution X-ray diffraction. A method for analyzing the experimental rocking curves of multilayer structures in terms of the Parratt-Speriosu model is developed. This method permits one to determine the thickness, period, and average composition of InxGa1 − xN/GaN layers, as well as the deformation of the active region in the samples under study. The local indium content is determined using the theoretical model which describes the radiation energy as a function of the thicknesses of the InGaN layers taking into account the energy of quantum confinement, the energies of the spontaneous polarization and piezoelectric polarization, and the parameters determined from high-resolution X-ray diffraction data. More... »

PAGES

1615-1621

Journal

TITLE

Physics of the Solid State

ISSUE

8

VOLUME

51

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783409080162

DOI

http://dx.doi.org/10.1134/s1063783409080162

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013223225


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