Photoluminescence of SiO2 layers prepared on β-SiC films and an analysis of their elemental composition View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2007-05

AUTHORS

A. M. Danishevskiĭ, V. M. Lebedev, A. Yu. Rogachev, V. B. Shuman, A. A. Sitnikova, R. V. Zolotareva

ABSTRACT

The spectra of pulsed time-resolved photoluminescence of oxidized films prepared through electrochemical oxidation on SiC/Si films are investigated. The elemental composition of the films is analyzed using Rutherford backscattering and nuclear reactions. It is revealed that a certain part of the carbon atoms remain in the oxide. The specific features of the parameters of the spectral bands and their kinetics with time are explained by the presence of carbon uniformly distributed throughout the oxide. The structure of oxides at different oxidation times is examined with the use of electron microscopy. Conclusions are drawn regarding possible photoluminescence centers. More... »

PAGES

831-838

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063783407050058

DOI

http://dx.doi.org/10.1134/s1063783407050058

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1012870960


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