Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses View Full Text


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Article Info

DATE

2022-04

AUTHORS

B. E. Umirzakov, S. B. Donaev, R. M. Yorkulov, R. Kh. Ashurov, V. M. Rotshtein

ABSTRACT

—The composition, morphology, and electronic structure of a SiO2 nanofilm of different thicknesses created by thermal oxidation on the Si(111) surface are studied in this work. It is shown that up to a thickness of 30–40 Å the film has an island character. At d ≥ 60 Å, a homogeneous continuous film of SiO2 with stoichiometric surface roughness, which does not exceed 1.5–2 nm, is formed. Regardless of the thickness of the SiO2 films, the noticeable interdiffusion of atoms at the SiO2–Si interface is not observed. The regularities of changes in the composition, the degree of surface coverage, and the energy of plasma oscillations with a change in the thickness of SiO2/Si(111) films are determined in the range from 20 to 120 Å. More... »

PAGES

266-268

References to SciGraph publications

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  • 2014-10-15. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation in TECHNICAL PHYSICS
  • 2017-09. Method for additional purification of the surface of Si(111) single crystal in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-07. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-05-25. Composition and properties of nanoscale Si structures formed on the CoSi2/Si(111) surface by Ar+ ion bombardment in TECHNICAL PHYSICS
  • 2015-07-01. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) in SEMICONDUCTORS
  • 2013-03-14. Specific features of the formation of arrays of silver clusters from a thin film on a SiO2 surface in PHYSICS OF THE SOLID STATE
  • 2017-10. Сrystallinity and size control of silicon nanoparticles synthesized from monosilane in glow-discharge plasma in APPLIED SOLAR ENERGY
  • 2014-11-15. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon in TECHNICAL PHYSICS
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    http://scigraph.springernature.com/pub.10.1134/s1063782622040054

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    http://dx.doi.org/10.1134/s1063782622040054

    DIMENSIONS

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