On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon View Full Text


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Article Info

DATE

2022-04

AUTHORS

P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len’shin, N. S. Buylov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsentyev, Sh. Sharafidinov, S. A. Kukushkin, I. A. Kasatkin

ABSTRACT

—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid substrate containing layers of silicon carbide and porous silicon. Using X-ray diffractometry, Raman and photoluminescence spectroscopy, it is shown that thin films formed on a hybrid substrate have minimal residual stresses and intense photoluminescence. More... »

PAGES

253-258

References to SciGraph publications

  • 2014-01-05. Structure and optical properties of heterostructures based on MOCVD (AlxGa1 − xAs1 − yPy)1 − zSiz alloys in SEMICONDUCTORS
  • 2019-07-15. Strain-stress study of AlxGa1−xN/AlN heterostructures on c-plane sapphire and related optical properties in SCIENTIFIC REPORTS
  • 2016-11-21. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations in SCIENTIFIC REPORTS
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  • 2021-12. Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material in INORGANIC MATERIALS
  • 2010-01-23. XRD and Raman Study of Low Temperature AlGaAs/GaAs (100) Heterostructures in ADVANCED MATERIALS AND TECHNOLOGIES FOR MICRO/NANO-DEVICES, SENSORS AND ACTUATORS
  • 2011-04-16. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride AlxGa1 − xAs:Si/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2010-02. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2013-01-07. Superstructured ordering in AlxGa1 − xAs and GaxIn1 − xP alloys in SEMICONDUCTORS
  • 2011-11. Spinodal Decomposition of GaxIn1−xAsyP1−yQuaternary Alloys in SEMICONDUCTORS
  • 2014-08-06. Structural and optical properties of heavily doped AlxGa1 − xAs1 − yPy:Mg alloys produced by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782622040030

    DOI

    http://dx.doi.org/10.1134/s1063782622040030

    DIMENSIONS

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