On the Size Effect in MOS Structures under Ionizing Irradiation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2022-04

AUTHORS

O. V. Aleksandrov

ABSTRACT

A quantitative model of the size effect, i.e., the dependence of surface states on the gate size, in metal—oxide—semiconductor (MOS) structures subjected to ionizing irradiation is developed. It is assumed that the size effect is induced by the escape of hydrogen released from hydrogen-containing hole traps through the ends of a two-dimensional MOS structure. The effect is described by a system of diffusion–kinetic equations solved together with the Poisson equation. The influence of processing treatments and thermal-oxidation modes on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is introduced by the diffusion of neutral hydrogen atoms accelerated by ionizing irradiation. More... »

PAGES

241-245

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782622040017

DOI

http://dx.doi.org/10.1134/s1063782622040017

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1149072833


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "St. Petersburg State Electrotechnical University \u201cLETI\u201d, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Aleksandrov", 
        "givenName": "O. V.", 
        "id": "sg:person.013325156241.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013325156241.07"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782620020025", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1125338146", 
          "https://doi.org/10.1134/s1063782620020025"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782615060020", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052509903", 
          "https://doi.org/10.1134/s1063782615060020"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2022-04", 
    "datePublishedReg": "2022-04-01", 
    "description": "A quantitative model of the size effect, i.e., the dependence of surface states on the gate size, in metal\u2014oxide\u2014semiconductor (MOS) structures subjected to ionizing irradiation is developed. It is assumed that the size effect is induced by the escape of hydrogen released from hydrogen-containing hole traps through the ends of a two-dimensional MOS structure. The effect is described by a system of diffusion\u2013kinetic equations solved together with the Poisson equation. The influence of processing treatments and thermal-oxidation modes on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is introduced by the diffusion of neutral hydrogen atoms accelerated by ionizing irradiation.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782622040017", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "56"
      }
    ], 
    "keywords": [
      "MOS structures", 
      "size effect", 
      "diffusion kinetics equations", 
      "gate oxide", 
      "semiconductor structures", 
      "processing treatments", 
      "gate size", 
      "Poisson equation", 
      "surface states", 
      "hole traps", 
      "equations", 
      "main contribution", 
      "escape of hydrogen", 
      "structure", 
      "irradiation", 
      "oxide", 
      "neutral hydrogen atoms", 
      "hydrogen", 
      "different concentrations", 
      "diffusion", 
      "mode", 
      "quantitative model", 
      "effect", 
      "traps", 
      "influence", 
      "system", 
      "magnitude", 
      "dependence", 
      "size", 
      "hydrogen atoms", 
      "model", 
      "concentration", 
      "contribution", 
      "atoms", 
      "state", 
      "end", 
      "Ionizing Irradiation", 
      "escape", 
      "treatment"
    ], 
    "name": "On the Size Effect in MOS Structures under Ionizing Irradiation", 
    "pagination": "241-245", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1149072833"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782622040017"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782622040017", 
      "https://app.dimensions.ai/details/publication/pub.1149072833"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T16:07", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_933.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782622040017"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782622040017'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782622040017'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782622040017'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782622040017'


 

This table displays all metadata directly associated to this object as RDF triples.

108 TRIPLES      21 PREDICATES      67 URIs      56 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782622040017 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N1d205e7ee8db4828be37bf0b92d61f51
5 schema:citation sg:pub.10.1134/s1063782615060020
6 sg:pub.10.1134/s1063782620020025
7 schema:datePublished 2022-04
8 schema:datePublishedReg 2022-04-01
9 schema:description A quantitative model of the size effect, i.e., the dependence of surface states on the gate size, in metal—oxide—semiconductor (MOS) structures subjected to ionizing irradiation is developed. It is assumed that the size effect is induced by the escape of hydrogen released from hydrogen-containing hole traps through the ends of a two-dimensional MOS structure. The effect is described by a system of diffusion–kinetic equations solved together with the Poisson equation. The influence of processing treatments and thermal-oxidation modes on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is introduced by the diffusion of neutral hydrogen atoms accelerated by ionizing irradiation.
10 schema:genre article
11 schema:isAccessibleForFree false
12 schema:isPartOf N9757a96307984947b9527c255e9b71a0
13 Ne5a6c5072e11448ea21fe792d80d403c
14 sg:journal.1136692
15 schema:keywords Ionizing Irradiation
16 MOS structures
17 Poisson equation
18 atoms
19 concentration
20 contribution
21 dependence
22 different concentrations
23 diffusion
24 diffusion kinetics equations
25 effect
26 end
27 equations
28 escape
29 escape of hydrogen
30 gate oxide
31 gate size
32 hole traps
33 hydrogen
34 hydrogen atoms
35 influence
36 irradiation
37 magnitude
38 main contribution
39 mode
40 model
41 neutral hydrogen atoms
42 oxide
43 processing treatments
44 quantitative model
45 semiconductor structures
46 size
47 size effect
48 state
49 structure
50 surface states
51 system
52 traps
53 treatment
54 schema:name On the Size Effect in MOS Structures under Ionizing Irradiation
55 schema:pagination 241-245
56 schema:productId N81e48f395c4a4132a2df1318fc1070cd
57 N8e0c51e17abc4441b9def049f26e30ab
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1149072833
59 https://doi.org/10.1134/s1063782622040017
60 schema:sdDatePublished 2022-09-02T16:07
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher N9a2ee51d099a4406acbe0eaba6325213
63 schema:url https://doi.org/10.1134/s1063782622040017
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N1d205e7ee8db4828be37bf0b92d61f51 rdf:first sg:person.013325156241.07
68 rdf:rest rdf:nil
69 N81e48f395c4a4132a2df1318fc1070cd schema:name doi
70 schema:value 10.1134/s1063782622040017
71 rdf:type schema:PropertyValue
72 N8e0c51e17abc4441b9def049f26e30ab schema:name dimensions_id
73 schema:value pub.1149072833
74 rdf:type schema:PropertyValue
75 N9757a96307984947b9527c255e9b71a0 schema:volumeNumber 56
76 rdf:type schema:PublicationVolume
77 N9a2ee51d099a4406acbe0eaba6325213 schema:name Springer Nature - SN SciGraph project
78 rdf:type schema:Organization
79 Ne5a6c5072e11448ea21fe792d80d403c schema:issueNumber 4
80 rdf:type schema:PublicationIssue
81 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
82 schema:name Physical Sciences
83 rdf:type schema:DefinedTerm
84 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
85 schema:name Condensed Matter Physics
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
88 schema:name Quantum Physics
89 rdf:type schema:DefinedTerm
90 sg:journal.1136692 schema:issn 1063-7826
91 1090-6479
92 schema:name Semiconductors
93 schema:publisher Pleiades Publishing
94 rdf:type schema:Periodical
95 sg:person.013325156241.07 schema:affiliation grid-institutes:grid.15447.33
96 schema:familyName Aleksandrov
97 schema:givenName O. V.
98 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013325156241.07
99 rdf:type schema:Person
100 sg:pub.10.1134/s1063782615060020 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052509903
101 https://doi.org/10.1134/s1063782615060020
102 rdf:type schema:CreativeWork
103 sg:pub.10.1134/s1063782620020025 schema:sameAs https://app.dimensions.ai/details/publication/pub.1125338146
104 https://doi.org/10.1134/s1063782620020025
105 rdf:type schema:CreativeWork
106 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
107 schema:name St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia
108 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...