Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2022-03

AUTHORS

I. E. Tyschenko, E. V. Spesivtsev, A. A. Shklyaev, V. P. Popov

ABSTRACT

—The thermal stability of silicon-on-insulator films with a thickness of 4.7 and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si–Si bonds. More... »

PAGES

223-229

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782622020166

DOI

http://dx.doi.org/10.1134/s1063782622020166

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1147967980


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tyschenko", 
        "givenName": "I.\u00a0E.", 
        "id": "sg:person.013617030725.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013617030725.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Spesivtsev", 
        "givenName": "E.\u00a0V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Novosibirsk State University, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4605.7", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia", 
            "Novosibirsk State University, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shklyaev", 
        "givenName": "A.\u00a0A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Popov", 
        "givenName": "V.\u00a0P.", 
        "id": "sg:person.016040143647.02", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016040143647.02"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1557/jmr.1994.1307", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1043089473", 
          "https://doi.org/10.1557/jmr.1994.1307"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1557/proc-318-69", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067926369", 
          "https://doi.org/10.1557/proc-318-69"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611080021", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044417766", 
          "https://doi.org/10.1134/s1063782611080021"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf00617135", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1002932847", 
          "https://doi.org/10.1007/bf00617135"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063784219040108", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1114353715", 
          "https://doi.org/10.1134/s1063784219040108"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2022-03", 
    "datePublishedReg": "2022-03-01", 
    "description": "Abstract\u2014The thermal stability of silicon-on-insulator films with a thickness of 4.7\u00a0 and 2.2\u00a0nm is studied as a function of annealing temperature in the range of \u0422\u00a0=\u00a0800\u20131200\u00b0C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si\u2013Si bonds.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782622020166", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "56"
      }
    ], 
    "keywords": [
      "insulator films", 
      "spectral ellipsometry", 
      "high-temperature annealing", 
      "annealing temperature range", 
      "amorphous phase increases", 
      "silicon films", 
      "nanometer-thick silicon", 
      "film melting", 
      "film amorphization", 
      "viewpoint of diffusion", 
      "film decreases", 
      "annealing temperature", 
      "phase composition", 
      "Si-Si bonds", 
      "thermal stability", 
      "phase increases", 
      "films", 
      "crystalline phase", 
      "temperature range", 
      "silicon", 
      "electron microscopy", 
      "activation energy", 
      "temperature", 
      "ellipsometry", 
      "thickness", 
      "annealing", 
      "amorphization", 
      "range", 
      "diffusion", 
      "melting", 
      "stability", 
      "energy", 
      "microscopy", 
      "properties", 
      "content", 
      "phase", 
      "structural changes", 
      "increase", 
      "process", 
      "composition", 
      "decrease", 
      "viewpoint", 
      "oxygen atoms", 
      "changes", 
      "atoms", 
      "bonds", 
      "function", 
      "data", 
      "rearrangement", 
      "signs"
    ], 
    "name": "Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing", 
    "pagination": "223-229", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1147967980"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782622020166"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782622020166", 
      "https://app.dimensions.ai/details/publication/pub.1147967980"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-12-01T06:43", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221201/entities/gbq_results/article/article_919.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782622020166"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782622020166'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782622020166'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782622020166'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782622020166'


 

This table displays all metadata directly associated to this object as RDF triples.

154 TRIPLES      21 PREDICATES      81 URIs      67 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782622020166 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N2ed85da8a2d240e1b1c8b61ff32b4c19
5 schema:citation sg:pub.10.1007/bf00617135
6 sg:pub.10.1134/s1063782611080021
7 sg:pub.10.1134/s1063784219040108
8 sg:pub.10.1557/jmr.1994.1307
9 sg:pub.10.1557/proc-318-69
10 schema:datePublished 2022-03
11 schema:datePublishedReg 2022-03-01
12 schema:description Abstract—The thermal stability of silicon-on-insulator films with a thickness of 4.7  and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si–Si bonds.
13 schema:genre article
14 schema:isAccessibleForFree false
15 schema:isPartOf N4c19d842799041c1888e5957b7d2e99c
16 Nfa6e4d27813a4e249139ac2c1f30380d
17 sg:journal.1136692
18 schema:keywords Si-Si bonds
19 activation energy
20 amorphization
21 amorphous phase increases
22 annealing
23 annealing temperature
24 annealing temperature range
25 atoms
26 bonds
27 changes
28 composition
29 content
30 crystalline phase
31 data
32 decrease
33 diffusion
34 electron microscopy
35 ellipsometry
36 energy
37 film amorphization
38 film decreases
39 film melting
40 films
41 function
42 high-temperature annealing
43 increase
44 insulator films
45 melting
46 microscopy
47 nanometer-thick silicon
48 oxygen atoms
49 phase
50 phase composition
51 phase increases
52 process
53 properties
54 range
55 rearrangement
56 signs
57 silicon
58 silicon films
59 spectral ellipsometry
60 stability
61 structural changes
62 temperature
63 temperature range
64 thermal stability
65 thickness
66 viewpoint
67 viewpoint of diffusion
68 schema:name Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing
69 schema:pagination 223-229
70 schema:productId N50aab94a971443dfb7d18fecb78f0580
71 N5716e1386007472399a704f51c0bd585
72 schema:sameAs https://app.dimensions.ai/details/publication/pub.1147967980
73 https://doi.org/10.1134/s1063782622020166
74 schema:sdDatePublished 2022-12-01T06:43
75 schema:sdLicense https://scigraph.springernature.com/explorer/license/
76 schema:sdPublisher N710989eee183490894d9cbf6f03cc7ae
77 schema:url https://doi.org/10.1134/s1063782622020166
78 sgo:license sg:explorer/license/
79 sgo:sdDataset articles
80 rdf:type schema:ScholarlyArticle
81 N08acec775dc0441588d6d2bd4c290269 schema:affiliation grid-institutes:grid.415877.8
82 schema:familyName Spesivtsev
83 schema:givenName E. V.
84 rdf:type schema:Person
85 N1f6ffed874524b8797f4546567a1067d rdf:first sg:person.016040143647.02
86 rdf:rest rdf:nil
87 N2ed85da8a2d240e1b1c8b61ff32b4c19 rdf:first sg:person.013617030725.51
88 rdf:rest N79605a1ca22d47ddbf5ccb98f5624fe1
89 N3f8a5f5eb6694ab98b6679a652638686 schema:affiliation grid-institutes:grid.4605.7
90 schema:familyName Shklyaev
91 schema:givenName A. A.
92 rdf:type schema:Person
93 N4c19d842799041c1888e5957b7d2e99c schema:volumeNumber 56
94 rdf:type schema:PublicationVolume
95 N50aab94a971443dfb7d18fecb78f0580 schema:name doi
96 schema:value 10.1134/s1063782622020166
97 rdf:type schema:PropertyValue
98 N5716e1386007472399a704f51c0bd585 schema:name dimensions_id
99 schema:value pub.1147967980
100 rdf:type schema:PropertyValue
101 N710989eee183490894d9cbf6f03cc7ae schema:name Springer Nature - SN SciGraph project
102 rdf:type schema:Organization
103 N79605a1ca22d47ddbf5ccb98f5624fe1 rdf:first N08acec775dc0441588d6d2bd4c290269
104 rdf:rest N8f6d8cd00be4479b9f50355312ba28e2
105 N8f6d8cd00be4479b9f50355312ba28e2 rdf:first N3f8a5f5eb6694ab98b6679a652638686
106 rdf:rest N1f6ffed874524b8797f4546567a1067d
107 Nfa6e4d27813a4e249139ac2c1f30380d schema:issueNumber 3
108 rdf:type schema:PublicationIssue
109 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
110 schema:name Physical Sciences
111 rdf:type schema:DefinedTerm
112 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
113 schema:name Condensed Matter Physics
114 rdf:type schema:DefinedTerm
115 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
116 schema:name Quantum Physics
117 rdf:type schema:DefinedTerm
118 sg:journal.1136692 schema:issn 1063-7826
119 1090-6479
120 schema:name Semiconductors
121 schema:publisher Pleiades Publishing
122 rdf:type schema:Periodical
123 sg:person.013617030725.51 schema:affiliation grid-institutes:grid.415877.8
124 schema:familyName Tyschenko
125 schema:givenName I. E.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013617030725.51
127 rdf:type schema:Person
128 sg:person.016040143647.02 schema:affiliation grid-institutes:grid.415877.8
129 schema:familyName Popov
130 schema:givenName V. P.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016040143647.02
132 rdf:type schema:Person
133 sg:pub.10.1007/bf00617135 schema:sameAs https://app.dimensions.ai/details/publication/pub.1002932847
134 https://doi.org/10.1007/bf00617135
135 rdf:type schema:CreativeWork
136 sg:pub.10.1134/s1063782611080021 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044417766
137 https://doi.org/10.1134/s1063782611080021
138 rdf:type schema:CreativeWork
139 sg:pub.10.1134/s1063784219040108 schema:sameAs https://app.dimensions.ai/details/publication/pub.1114353715
140 https://doi.org/10.1134/s1063784219040108
141 rdf:type schema:CreativeWork
142 sg:pub.10.1557/jmr.1994.1307 schema:sameAs https://app.dimensions.ai/details/publication/pub.1043089473
143 https://doi.org/10.1557/jmr.1994.1307
144 rdf:type schema:CreativeWork
145 sg:pub.10.1557/proc-318-69 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067926369
146 https://doi.org/10.1557/proc-318-69
147 rdf:type schema:CreativeWork
148 grid-institutes:grid.415877.8 schema:alternateName Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
149 schema:name Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
150 rdf:type schema:Organization
151 grid-institutes:grid.4605.7 schema:alternateName Novosibirsk State University, 630090, Novosibirsk, Russia
152 schema:name Novosibirsk State University, 630090, Novosibirsk, Russia
153 Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
154 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...