The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs View Full Text


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Article Info

DATE

2022-03

AUTHORS

O. V. Aleksandrov, N. S. Tyapkin, S. A. Mokrushina, V. N. Fomin

ABSTRACT

—The effect of ionizing irradiation (IIr) on the formation of charges at the internal SiO2–Si (substrate) and external SiO2–SiPSi (gate) interfacial boundaries (IFBs) and on the gate breakdown of MOSFET transistors has been studied. It is shown that with an increase in the dose of IIr near the internal IFBs, a monotonic increase of the positive charge in p-MOSFETs, the accumulation of positive charges at first, and the accumulation of negative charges in n-MOSFETs at doses above 105 rad is observed. Near the outer IFB, the positive charge accumulation is observed at low radiation doses, and at doses higher than 106 rad, a negative charge in both p-and n-MOSFETs is observed. It is shown that up to a dose of 108 rad, IR does not have a noticeable effect on the gate breakdown voltage in both p- and n-MOSFETs at both polarities. The absence of influence is explained by a breakdown by the mechanism of anode hole injection. More... »

PAGES

160-163

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782622020038

DOI

http://dx.doi.org/10.1134/s1063782622020038

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1147967969


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