Ontology type: schema:ScholarlyArticle
2021-03
AUTHORSYu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, A. A. Serin, G. O. Kornyshov, A. M. Nadtochiy, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. E. Zhukov
ABSTRACTEdge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots. More... »
PAGES333-340
http://scigraph.springernature.com/pub.10.1134/s1063782621030167
DOIhttp://dx.doi.org/10.1134/s1063782621030167
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