Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-03

AUTHORS

Yu. M. Shernyakov, N. Yu. Gordeev, A. S. Payusov, A. A. Serin, G. O. Kornyshov, A. M. Nadtochiy, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. E. Zhukov

ABSTRACT

Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with increasing optical confinement factor as the cavity length decreases. In a laser with 10 quantum well-dot layers, the lasing-wavelength position remains within the limits of the fundamental optical transition down to the smallest cavity lengths (100 μm). In devices with a single quantum well-dot layer and/or with a low optical confinement factor, lasing directly switches from the ground state to waveguide states omitting excited states below ≤200 μm. Such an effect has not been observed in quantum-well- and quantum-dot lasers and can be attributed to the abnormally low density of excited states in quantum well-dots. More... »

PAGES

333-340

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782621030167

DOI

http://dx.doi.org/10.1134/s1063782621030167

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1136933853


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