Ontology type: schema:ScholarlyArticle
2021-02-19
AUTHORSP. A. Ivanov, N. M. Lebedeva, N. D. Il’inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon’kov, Yu. M. Zadiranov
ABSTRACTHigh-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10–12-μm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current–voltage characteristics of terminated and nonterminated diodes shows that the forward current–voltage characteristics barely degrade after implantation, whereas the reverse current–voltage characteristics are greatly improved. Both the forward and reverse current–voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account. More... »
PAGES243-249
http://scigraph.springernature.com/pub.10.1134/s1063782621020147
DOIhttp://dx.doi.org/10.1134/s1063782621020147
DIMENSIONShttps://app.dimensions.ai/details/publication/pub.1135463903
JSON-LD is the canonical representation for SciGraph data.
TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT
[
{
"@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json",
"about": [
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Physical Sciences",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Condensed Matter Physics",
"type": "DefinedTerm"
},
{
"id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206",
"inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/",
"name": "Quantum Physics",
"type": "DefinedTerm"
}
],
"author": [
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Ivanov",
"givenName": "P. A.",
"id": "sg:person.010230425734.18",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Lebedeva",
"givenName": "N. M.",
"id": "sg:person.011260123477.05",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011260123477.05"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Il\u2019inskaya",
"givenName": "N. D.",
"id": "sg:person.010015773715.60",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kudoyarov",
"givenName": "M. F.",
"id": "sg:person.016305715656.77",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Samsonova",
"givenName": "T. P.",
"id": "sg:person.010276541134.45",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Kon\u2019kov",
"givenName": "O. I.",
"id": "sg:person.012364253231.30",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30"
],
"type": "Person"
},
{
"affiliation": {
"alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia",
"id": "http://www.grid.ac/institutes/grid.423485.c",
"name": [
"Ioffe Institute, 194021, St. Petersburg, Russia"
],
"type": "Organization"
},
"familyName": "Zadiranov",
"givenName": "Yu. M.",
"id": "sg:person.012622441533.05",
"sameAs": [
"https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012622441533.05"
],
"type": "Person"
}
],
"citation": [
{
"id": "sg:pub.10.1134/s1063782613010132",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1021487721",
"https://doi.org/10.1134/s1063782613010132"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063785018030197",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1103429475",
"https://doi.org/10.1134/s1063785018030197"
],
"type": "CreativeWork"
},
{
"id": "sg:pub.10.1134/s1063782616070071",
"sameAs": [
"https://app.dimensions.ai/details/publication/pub.1032116015",
"https://doi.org/10.1134/s1063782616070071"
],
"type": "CreativeWork"
}
],
"datePublished": "2021-02-19",
"datePublishedReg": "2021-02-19",
"description": "High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10\u201312-\u03bcm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current\u2013voltage characteristics of terminated and nonterminated diodes shows that the forward current\u2013voltage characteristics barely degrade after implantation, whereas the reverse current\u2013voltage characteristics are greatly improved. Both the forward and reverse current\u2013voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account.",
"genre": "article",
"id": "sg:pub.10.1134/s1063782621020147",
"inLanguage": "en",
"isAccessibleForFree": false,
"isPartOf": [
{
"id": "sg:journal.1136692",
"issn": [
"1063-7826",
"1090-6479"
],
"name": "Semiconductors",
"publisher": "Pleiades Publishing",
"type": "Periodical"
},
{
"issueNumber": "2",
"type": "PublicationIssue"
},
{
"type": "PublicationVolume",
"volumeNumber": "55"
}
],
"keywords": [
"current-voltage characteristics",
"high-voltage 4H-SiC Schottky",
"field plate edge termination",
"self-aligned implantation",
"forward current-voltage characteristics",
"reverse current-voltage characteristics",
"edge termination",
"thermionic emission model",
"Schottky barrier height",
"field plate",
"vertical wall",
"insulator layer",
"Schottky contacts",
"local electrochemical deposition",
"Schottky diodes",
"high-energy argon ions",
"premature breakdown",
"diode structure",
"electrochemical deposition",
"diodes",
"emission model",
"argon ions",
"active region",
"plate",
"Schottky",
"characteristics",
"layer",
"energy bands",
"deposition",
"wall",
"height",
"implantation",
"column",
"contact",
"edge",
"structure",
"breakdown",
"band",
"model",
"ions",
"account",
"comparison",
"terms",
"lowering",
"region",
"nickel column",
"termination"
],
"name": "High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination",
"pagination": "243-249",
"productId": [
{
"name": "dimensions_id",
"type": "PropertyValue",
"value": [
"pub.1135463903"
]
},
{
"name": "doi",
"type": "PropertyValue",
"value": [
"10.1134/s1063782621020147"
]
}
],
"sameAs": [
"https://doi.org/10.1134/s1063782621020147",
"https://app.dimensions.ai/details/publication/pub.1135463903"
],
"sdDataset": "articles",
"sdDatePublished": "2022-05-10T10:31",
"sdLicense": "https://scigraph.springernature.com/explorer/license/",
"sdPublisher": {
"name": "Springer Nature - SN SciGraph project",
"type": "Organization"
},
"sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_896.jsonl",
"type": "ScholarlyArticle",
"url": "https://doi.org/10.1134/s1063782621020147"
}
]Download the RDF metadata as: json-ld nt turtle xml License info
JSON-LD is a popular format for linked data which is fully compatible with JSON.
curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'
N-Triples is a line-based linked data format ideal for batch operations.
curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'
Turtle is a human-readable linked data format.
curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'
RDF/XML is a standard XML format for linked data.
curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'
This table displays all metadata directly associated to this object as RDF triples.
163 TRIPLES
22 PREDICATES
76 URIs
64 LITERALS
6 BLANK NODES