High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2021-02-19

AUTHORS

P. A. Ivanov, N. M. Lebedeva, N. D. Il’inskaya, M. F. Kudoyarov, T. P. Samsonova, O. I. Kon’kov, Yu. M. Zadiranov

ABSTRACT

High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10–12-μm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current–voltage characteristics of terminated and nonterminated diodes shows that the forward current–voltage characteristics barely degrade after implantation, whereas the reverse current–voltage characteristics are greatly improved. Both the forward and reverse current–voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account. More... »

PAGES

243-249

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782621020147

DOI

http://dx.doi.org/10.1134/s1063782621020147

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1135463903


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedeva", 
        "givenName": "N. M.", 
        "id": "sg:person.011260123477.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011260123477.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il\u2019inskaya", 
        "givenName": "N. D.", 
        "id": "sg:person.010015773715.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kudoyarov", 
        "givenName": "M. F.", 
        "id": "sg:person.016305715656.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonova", 
        "givenName": "T. P.", 
        "id": "sg:person.010276541134.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kon\u2019kov", 
        "givenName": "O. I.", 
        "id": "sg:person.012364253231.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zadiranov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.012622441533.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012622441533.05"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782613010132", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021487721", 
          "https://doi.org/10.1134/s1063782613010132"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785018030197", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1103429475", 
          "https://doi.org/10.1134/s1063785018030197"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782616070071", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032116015", 
          "https://doi.org/10.1134/s1063782616070071"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2021-02-19", 
    "datePublishedReg": "2021-02-19", 
    "description": "High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10\u201312-\u03bcm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current\u2013voltage characteristics of terminated and nonterminated diodes shows that the forward current\u2013voltage characteristics barely degrade after implantation, whereas the reverse current\u2013voltage characteristics are greatly improved. Both the forward and reverse current\u2013voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782621020147", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "2", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "55"
      }
    ], 
    "keywords": [
      "current-voltage characteristics", 
      "high-voltage 4H-SiC Schottky", 
      "field plate edge termination", 
      "self-aligned implantation", 
      "forward current-voltage characteristics", 
      "reverse current-voltage characteristics", 
      "edge termination", 
      "thermionic emission model", 
      "Schottky barrier height", 
      "field plate", 
      "vertical wall", 
      "insulator layer", 
      "Schottky contacts", 
      "local electrochemical deposition", 
      "Schottky diodes", 
      "high-energy argon ions", 
      "premature breakdown", 
      "diode structure", 
      "electrochemical deposition", 
      "diodes", 
      "emission model", 
      "argon ions", 
      "active region", 
      "plate", 
      "Schottky", 
      "characteristics", 
      "layer", 
      "energy bands", 
      "deposition", 
      "wall", 
      "height", 
      "implantation", 
      "column", 
      "contact", 
      "edge", 
      "structure", 
      "breakdown", 
      "band", 
      "model", 
      "ions", 
      "account", 
      "comparison", 
      "terms", 
      "lowering", 
      "region", 
      "nickel column", 
      "termination"
    ], 
    "name": "High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination", 
    "pagination": "243-249", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1135463903"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782621020147"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782621020147", 
      "https://app.dimensions.ai/details/publication/pub.1135463903"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-10T10:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220509/entities/gbq_results/article/article_896.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782621020147"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782621020147'


 

This table displays all metadata directly associated to this object as RDF triples.

163 TRIPLES      22 PREDICATES      76 URIs      64 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782621020147 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Ne92489ffcc7c4c3db9a01c1c9424a983
5 schema:citation sg:pub.10.1134/s1063782613010132
6 sg:pub.10.1134/s1063782616070071
7 sg:pub.10.1134/s1063785018030197
8 schema:datePublished 2021-02-19
9 schema:datePublishedReg 2021-02-19
10 schema:description High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10–12-μm-thick nickel columns with vertical walls are grown on Schottky contacts by local electrochemical deposition. A comparison of the current–voltage characteristics of terminated and nonterminated diodes shows that the forward current–voltage characteristics barely degrade after implantation, whereas the reverse current–voltage characteristics are greatly improved. Both the forward and reverse current–voltage characteristics of terminated diodes are well described in terms of the classical thermionic emission model if lowering of the Schottky-barrier height with increasing bending of energy bands is taken into account.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N2f54e341b521455980387d37a1a163c7
15 Nf40931c1ee764d99a06227b9c0942a34
16 sg:journal.1136692
17 schema:keywords Schottky
18 Schottky barrier height
19 Schottky contacts
20 Schottky diodes
21 account
22 active region
23 argon ions
24 band
25 breakdown
26 characteristics
27 column
28 comparison
29 contact
30 current-voltage characteristics
31 deposition
32 diode structure
33 diodes
34 edge
35 edge termination
36 electrochemical deposition
37 emission model
38 energy bands
39 field plate
40 field plate edge termination
41 forward current-voltage characteristics
42 height
43 high-energy argon ions
44 high-voltage 4H-SiC Schottky
45 implantation
46 insulator layer
47 ions
48 layer
49 local electrochemical deposition
50 lowering
51 model
52 nickel column
53 plate
54 premature breakdown
55 region
56 reverse current-voltage characteristics
57 self-aligned implantation
58 structure
59 termination
60 terms
61 thermionic emission model
62 vertical wall
63 wall
64 schema:name High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination
65 schema:pagination 243-249
66 schema:productId N01559677782a40d1b736a2cfb75d3040
67 N39e305d58c204c09939f369344df21ab
68 schema:sameAs https://app.dimensions.ai/details/publication/pub.1135463903
69 https://doi.org/10.1134/s1063782621020147
70 schema:sdDatePublished 2022-05-10T10:31
71 schema:sdLicense https://scigraph.springernature.com/explorer/license/
72 schema:sdPublisher Nc836bf8c105f4c258ed7663dc162e80d
73 schema:url https://doi.org/10.1134/s1063782621020147
74 sgo:license sg:explorer/license/
75 sgo:sdDataset articles
76 rdf:type schema:ScholarlyArticle
77 N01559677782a40d1b736a2cfb75d3040 schema:name doi
78 schema:value 10.1134/s1063782621020147
79 rdf:type schema:PropertyValue
80 N22f6597a909e469e9376d2fe32cd1ce1 rdf:first sg:person.012364253231.30
81 rdf:rest Ndbb5a0c524394856a53cfb1280a3daca
82 N2f54e341b521455980387d37a1a163c7 schema:issueNumber 2
83 rdf:type schema:PublicationIssue
84 N39e305d58c204c09939f369344df21ab schema:name dimensions_id
85 schema:value pub.1135463903
86 rdf:type schema:PropertyValue
87 N80e1d846003a44dea0960210dfb54e71 rdf:first sg:person.016305715656.77
88 rdf:rest N88e6b4606f604392842870fc9cfc4f2e
89 N88e6b4606f604392842870fc9cfc4f2e rdf:first sg:person.010276541134.45
90 rdf:rest N22f6597a909e469e9376d2fe32cd1ce1
91 Nb357b2e32192456ab2633100a349c68b rdf:first sg:person.011260123477.05
92 rdf:rest Nd9db0437757a4b95871ed93f865247c4
93 Nc836bf8c105f4c258ed7663dc162e80d schema:name Springer Nature - SN SciGraph project
94 rdf:type schema:Organization
95 Nd9db0437757a4b95871ed93f865247c4 rdf:first sg:person.010015773715.60
96 rdf:rest N80e1d846003a44dea0960210dfb54e71
97 Ndbb5a0c524394856a53cfb1280a3daca rdf:first sg:person.012622441533.05
98 rdf:rest rdf:nil
99 Ne92489ffcc7c4c3db9a01c1c9424a983 rdf:first sg:person.010230425734.18
100 rdf:rest Nb357b2e32192456ab2633100a349c68b
101 Nf40931c1ee764d99a06227b9c0942a34 schema:volumeNumber 55
102 rdf:type schema:PublicationVolume
103 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
104 schema:name Physical Sciences
105 rdf:type schema:DefinedTerm
106 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
107 schema:name Condensed Matter Physics
108 rdf:type schema:DefinedTerm
109 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
110 schema:name Quantum Physics
111 rdf:type schema:DefinedTerm
112 sg:journal.1136692 schema:issn 1063-7826
113 1090-6479
114 schema:name Semiconductors
115 schema:publisher Pleiades Publishing
116 rdf:type schema:Periodical
117 sg:person.010015773715.60 schema:affiliation grid-institutes:grid.423485.c
118 schema:familyName Il’inskaya
119 schema:givenName N. D.
120 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60
121 rdf:type schema:Person
122 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Ivanov
124 schema:givenName P. A.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
126 rdf:type schema:Person
127 sg:person.010276541134.45 schema:affiliation grid-institutes:grid.423485.c
128 schema:familyName Samsonova
129 schema:givenName T. P.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010276541134.45
131 rdf:type schema:Person
132 sg:person.011260123477.05 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Lebedeva
134 schema:givenName N. M.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011260123477.05
136 rdf:type schema:Person
137 sg:person.012364253231.30 schema:affiliation grid-institutes:grid.423485.c
138 schema:familyName Kon’kov
139 schema:givenName O. I.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364253231.30
141 rdf:type schema:Person
142 sg:person.012622441533.05 schema:affiliation grid-institutes:grid.423485.c
143 schema:familyName Zadiranov
144 schema:givenName Yu. M.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012622441533.05
146 rdf:type schema:Person
147 sg:person.016305715656.77 schema:affiliation grid-institutes:grid.423485.c
148 schema:familyName Kudoyarov
149 schema:givenName M. F.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016305715656.77
151 rdf:type schema:Person
152 sg:pub.10.1134/s1063782613010132 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021487721
153 https://doi.org/10.1134/s1063782613010132
154 rdf:type schema:CreativeWork
155 sg:pub.10.1134/s1063782616070071 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032116015
156 https://doi.org/10.1134/s1063782616070071
157 rdf:type schema:CreativeWork
158 sg:pub.10.1134/s1063785018030197 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103429475
159 https://doi.org/10.1134/s1063785018030197
160 rdf:type schema:CreativeWork
161 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
162 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
163 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...