Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2020-12

AUTHORS

E. A. Lubyankina, V. V. Toporov, A. M. Mizerov, S. N. Timoshnev, K. Yu. Shubina, B. H. Bairamov, A. D. Bouravleuv

ABSTRACT

Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutual diffusion of Si and Ga and differences in thermal expansion coefficients and lattice parameters causing large number of defects. To improve the quality of GaN layers high temperature nitridation of silicon substrates was applied leading to stress relaxation and decrease of diffusion. More... »

PAGES

1847-1849

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782620140183

DOI

http://dx.doi.org/10.1134/s1063782620140183

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1134497844


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Alferov University, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Alferov University, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lubyankina", 
        "givenName": "E. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Toporov", 
        "givenName": "V. V.", 
        "id": "sg:person.016202220576.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016202220576.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alferov University, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Alferov University, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "A. M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alferov University, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Alferov University, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Timoshnev", 
        "givenName": "S. N.", 
        "id": "sg:person.012447053367.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012447053367.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Alferov University, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Alferov University, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shubina", 
        "givenName": "K. Yu.", 
        "id": "sg:person.015366243747.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Alferov University, St. Petersburg, Russia", 
            "Ioffe Institute, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bairamov", 
        "givenName": "B. H.", 
        "id": "sg:person.012114652327.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012114652327.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "AN NEO \u201cUniversity associated with IA EAEC\u201d, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Alferov University, St. Petersburg, Russia", 
            "Ioffe Institute, St. Petersburg, Russia", 
            "ETU LETI, St. Petersburg, Russia", 
            "AN NEO \u201cUniversity associated with IA EAEC\u201d, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouravleuv", 
        "givenName": "A. D.", 
        "id": "sg:person.012577710235.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782618120175", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1109764853", 
          "https://doi.org/10.1134/s1063782618120175"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2020-12", 
    "datePublishedReg": "2020-12-01", 
    "description": "Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutual diffusion of Si and Ga and differences in thermal expansion coefficients and lattice parameters causing large number of defects. To improve the quality of GaN layers high temperature nitridation of silicon substrates was applied leading to stress relaxation and decrease of diffusion.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782620140183", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "14", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "54"
      }
    ], 
    "keywords": [
      "GaN epitaxial layers", 
      "molecular beam epitaxy", 
      "silicon substrate", 
      "epitaxial layers", 
      "thermal expansion coefficient", 
      "high-temperature nitridation", 
      "GaN layers", 
      "electronic devises", 
      "beam epitaxy", 
      "expansion coefficient", 
      "mutual diffusion", 
      "high efficiency", 
      "nitridation", 
      "growth process", 
      "layer", 
      "epitaxy", 
      "Raman spectroscopy", 
      "Si", 
      "decrease of diffusion", 
      "lattice parameters", 
      "high potential", 
      "diffusion", 
      "substrate", 
      "fabrication", 
      "gas", 
      "large number", 
      "efficiency", 
      "coefficient", 
      "devises", 
      "parameters", 
      "spectroscopy", 
      "process", 
      "relaxation", 
      "investigation", 
      "defects", 
      "potential", 
      "number", 
      "quality", 
      "decrease", 
      "differences"
    ], 
    "name": "Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation", 
    "pagination": "1847-1849", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1134497844"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782620140183"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782620140183", 
      "https://app.dimensions.ai/details/publication/pub.1134497844"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-08-04T17:08", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220804/entities/gbq_results/article/article_840.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782620140183"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

153 TRIPLES      21 PREDICATES      67 URIs      57 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782620140183 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N5448fa133f7642f2a39be258f395ad17
5 schema:citation sg:pub.10.1134/s1063782618120175
6 schema:datePublished 2020-12
7 schema:datePublishedReg 2020-12-01
8 schema:description Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutual diffusion of Si and Ga and differences in thermal expansion coefficients and lattice parameters causing large number of defects. To improve the quality of GaN layers high temperature nitridation of silicon substrates was applied leading to stress relaxation and decrease of diffusion.
9 schema:genre article
10 schema:isAccessibleForFree false
11 schema:isPartOf N305be6fe4d694a4296fd714901bf7d19
12 N8d50e41baefd45168efcebaf5624c9e7
13 sg:journal.1136692
14 schema:keywords GaN epitaxial layers
15 GaN layers
16 Raman spectroscopy
17 Si
18 beam epitaxy
19 coefficient
20 decrease
21 decrease of diffusion
22 defects
23 devises
24 differences
25 diffusion
26 efficiency
27 electronic devises
28 epitaxial layers
29 epitaxy
30 expansion coefficient
31 fabrication
32 gas
33 growth process
34 high efficiency
35 high potential
36 high-temperature nitridation
37 investigation
38 large number
39 lattice parameters
40 layer
41 molecular beam epitaxy
42 mutual diffusion
43 nitridation
44 number
45 parameters
46 potential
47 process
48 quality
49 relaxation
50 silicon substrate
51 spectroscopy
52 substrate
53 thermal expansion coefficient
54 schema:name Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation
55 schema:pagination 1847-1849
56 schema:productId N39fc7754f541436397a9cd8cb8e6fb76
57 N88b8d95b9bfc4177a0a898ed968ae33c
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1134497844
59 https://doi.org/10.1134/s1063782620140183
60 schema:sdDatePublished 2022-08-04T17:08
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher Nb2c4e3b4d7604b5bad9e7fe0c7b1a520
63 schema:url https://doi.org/10.1134/s1063782620140183
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N1ee3057f4791472a80a30f7bb4829fb0 rdf:first sg:person.012447053367.11
68 rdf:rest N81df9db545b84369a6bf53ef0f2fee40
69 N2bec3abd3b96441c9c9cf7b643801468 rdf:first sg:person.012114652327.50
70 rdf:rest Na1659097ee2e4a1787548305d6f9cbab
71 N305be6fe4d694a4296fd714901bf7d19 schema:issueNumber 14
72 rdf:type schema:PublicationIssue
73 N39fc7754f541436397a9cd8cb8e6fb76 schema:name doi
74 schema:value 10.1134/s1063782620140183
75 rdf:type schema:PropertyValue
76 N435f54649f7c40fb8464a46d378d3d6b schema:affiliation grid-institutes:None
77 schema:familyName Lubyankina
78 schema:givenName E. A.
79 rdf:type schema:Person
80 N5448fa133f7642f2a39be258f395ad17 rdf:first N435f54649f7c40fb8464a46d378d3d6b
81 rdf:rest N7018f0294e2b4e5081396acf2883f7d5
82 N5ab8101bb5c54c1982d9f37665afba58 schema:affiliation grid-institutes:None
83 schema:familyName Mizerov
84 schema:givenName A. M.
85 rdf:type schema:Person
86 N7018f0294e2b4e5081396acf2883f7d5 rdf:first sg:person.016202220576.60
87 rdf:rest Nff1c6917ae7f4118be99f5f4f644c4ef
88 N81df9db545b84369a6bf53ef0f2fee40 rdf:first sg:person.015366243747.29
89 rdf:rest N2bec3abd3b96441c9c9cf7b643801468
90 N88b8d95b9bfc4177a0a898ed968ae33c schema:name dimensions_id
91 schema:value pub.1134497844
92 rdf:type schema:PropertyValue
93 N8d50e41baefd45168efcebaf5624c9e7 schema:volumeNumber 54
94 rdf:type schema:PublicationVolume
95 Na1659097ee2e4a1787548305d6f9cbab rdf:first sg:person.012577710235.67
96 rdf:rest rdf:nil
97 Nb2c4e3b4d7604b5bad9e7fe0c7b1a520 schema:name Springer Nature - SN SciGraph project
98 rdf:type schema:Organization
99 Nff1c6917ae7f4118be99f5f4f644c4ef rdf:first N5ab8101bb5c54c1982d9f37665afba58
100 rdf:rest N1ee3057f4791472a80a30f7bb4829fb0
101 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
102 schema:name Physical Sciences
103 rdf:type schema:DefinedTerm
104 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
105 schema:name Condensed Matter Physics
106 rdf:type schema:DefinedTerm
107 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
108 schema:name Quantum Physics
109 rdf:type schema:DefinedTerm
110 sg:journal.1136692 schema:issn 1063-7826
111 1090-6479
112 schema:name Semiconductors
113 schema:publisher Pleiades Publishing
114 rdf:type schema:Periodical
115 sg:person.012114652327.50 schema:affiliation grid-institutes:grid.423485.c
116 schema:familyName Bairamov
117 schema:givenName B. H.
118 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012114652327.50
119 rdf:type schema:Person
120 sg:person.012447053367.11 schema:affiliation grid-institutes:None
121 schema:familyName Timoshnev
122 schema:givenName S. N.
123 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012447053367.11
124 rdf:type schema:Person
125 sg:person.012577710235.67 schema:affiliation grid-institutes:None
126 schema:familyName Bouravleuv
127 schema:givenName A. D.
128 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67
129 rdf:type schema:Person
130 sg:person.015366243747.29 schema:affiliation grid-institutes:None
131 schema:familyName Shubina
132 schema:givenName K. Yu.
133 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29
134 rdf:type schema:Person
135 sg:person.016202220576.60 schema:affiliation grid-institutes:grid.423485.c
136 schema:familyName Toporov
137 schema:givenName V. V.
138 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016202220576.60
139 rdf:type schema:Person
140 sg:pub.10.1134/s1063782618120175 schema:sameAs https://app.dimensions.ai/details/publication/pub.1109764853
141 https://doi.org/10.1134/s1063782618120175
142 rdf:type schema:CreativeWork
143 grid-institutes:None schema:alternateName AN NEO “University associated with IA EAEC”, St. Petersburg, Russia
144 Alferov University, St. Petersburg, Russia
145 schema:name AN NEO “University associated with IA EAEC”, St. Petersburg, Russia
146 Alferov University, St. Petersburg, Russia
147 ETU LETI, St. Petersburg, Russia
148 Ioffe Institute, St. Petersburg, Russia
149 rdf:type schema:Organization
150 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, St. Petersburg, Russia
151 schema:name Alferov University, St. Petersburg, Russia
152 Ioffe Institute, St. Petersburg, Russia
153 rdf:type schema:Organization
 




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