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2020-10-09
AUTHORSR. A. Salii, S. A. Mintairov, A. M. Nadtochiy, V. N. Nevedomskii, M. Z. Shvarts, N. A. Kalyuzhnyy
ABSTRACTInAs and In0.8Ga0.2As quantum dots in a GaAs matrix as well as GaAs solar cells with quantum dots of both types in the i-region are obtained by metalorganic vapor-phase epitaxy. As a result of investigations by photoluminescence and transmission electron microscopy, it is found that the In0.8Ga0.2As quantum-dot array is highly uniform, contains a smaller number of large imperfect quantum dots, and also provides a decrease in mechanical stresses in the structure. An analysis of the spectral dependences of the internal quantum yield shows that the quality of a solar-cell matrix after embedding up to 20 rows of In0.8Ga0.2As quantum dots remains at a level close to the reference GaAs solar cells. In this case, a linear increase in the additional photocurrent generated due to the absorption of sub-bandgap photons in In0.8Ga0.2As quantum dots is provided with an increase in the number of rows of quantum dots, since the value of the photocurrent gain per row is preserved. More... »
PAGES1267-1275
http://scigraph.springernature.com/pub.10.1134/s1063782620100255
DOIhttp://dx.doi.org/10.1134/s1063782620100255
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