Investigation of the Photosensitivity of Narrow-Gap and Gapless HgCdTe Solid Solutions in the Terahertz and Sub-Terahertz Range View Full Text


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Article Info

DATE

2020-09-08

AUTHORS

V. V. Rumyantsev, K. V. Maremyanin, A. A. Razova, S. M. Sergeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov

ABSTRACT

The photoresponse is investigated in the frequency range of 0.15–15 THz in HgCdTe epitaxial layers with a cadmium concentration from 15.2 to 19.2% grown by molecular-beam epitaxy. It is shown that narrow-gap and gapless HgCdTe solid solutions can be used as detectors of both terahertz and sub-terahertz radiation with a characteristic response time of 2–4 ns and with a sensitivity approaching n-InSb-based detectors widely used in this range. More... »

PAGES

1096-1102

References to SciGraph publications

  • 2016-04-11. Modeling of Noise and Resistance of Semimetal Hg1-xCdxTe Quantum Well used as a Channel for THz Hot-Electron Bolometer in NANOSCALE RESEARCH LETTERS
  • 2019-09-03. Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures in SEMICONDUCTORS
  • 2008-09-30. Highly sensitive submillimeter InSb photodetectors in SEMICONDUCTORS
  • 2010-04-14. Growth of HgTe Quantum Wells for IR to THz Detectors in JOURNAL OF ELECTRONIC MATERIALS
  • 1982-03. A high-sensitivity near-millimeter-wave photoconductive detector using [Hg, Cd]Te in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2013-11-06. Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells in SEMICONDUCTORS
  • 2014-01-19. Observation of three-dimensional massless Kane fermions in a zinc-blende crystal in NATURE PHYSICS
  • 2006-06. Minority carrier lifetimes in HgCdTe alloys in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-04-16. Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes in SEMICONDUCTORS
  • 2011-02-06. Single valley Dirac fermions in zero-gap HgTe quantum wells in NATURE PHYSICS
  • 2015-01-08. Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling in SEMICONDUCTORS
  • 2019-08. Determining the Compositional Profile of HgTe/CdxHg1 – xTe Quantum Wells by Single-Wavelength Ellipsometry in OPTICS AND SPECTROSCOPY
  • 2015-09-03. Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination in SEMICONDUCTORS
  • 2019-08-12. Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons in NATURE PHOTONICS
  • 2012-11-07. Features of impurity-photoconductivity relaxation in boron-doped silicon in SEMICONDUCTORS
  • 2017-08. Terahertz Photoconductivity in Hg1−xCdxTe near the transition from the direct to inverted spectrum in JETP LETTERS
  • 2016-08-30. Temperature-driven massless Kane fermions in HgCdTe crystals in NATURE COMMUNICATIONS
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/s1063782620090249

    DOI

    http://dx.doi.org/10.1134/s1063782620090249

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1130694257


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