Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons View Full Text


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Article Info

DATE

2020-09-08

AUTHORS

K. V. Maremyanin, V. V. Parshin, E. A. Serov, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, A. P. Fokin, S. S. Morosov, V. Ya. Aleshkin, M. Yu. Glyavin, G. G. Denisov, S. V. Morozov

ABSTRACT

The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10–4 even for a noticeable, at a level of 1012 cm–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons. More... »

PAGES

1069-1074

References to SciGraph publications

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  • 2019-09-03. Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures in SEMICONDUCTORS
  • 1999-10. Precision Resonator Microwave Spectroscopy in Millimeter and Submillimeter Range in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 1967-09. The induced radiation of excited classical oscillators and its use in high-frequency electronics in RADIOPHYSICS AND QUANTUM ELECTRONICS
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  • 2012-05-04. Nanosecond Laser-Driven Semiconductor Switch for 70 GHz Microwave Radiation in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2003-11. An Automated Millimeter-Wave Resonator Spectrometer for Investigating the Small Absorption in Gases in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 1992-07. A method to measure dielectric parameters in 5–0.5 millimeter wavelength band in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2001-03. Coherent manipulation of semiconductor quantum bits with terahertz radiation in NATURE
  • 2007-10. Fast quasi-optical phase shifter based on the effect of induced photo conductivity in silicon in RADIOPHYSICS AND QUANTUM ELECTRONICS
  • 2002-08. Single-pulse coherently controlled nonlinear Raman spectroscopy and microscopy in NATURE
  • 2009-08. Instrumental complex and the results of precise measurements of millimeter- and submillimeter-wave propagation in condensed media and the atmosphere in RADIOPHYSICS AND QUANTUM ELECTRONICS
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    http://scigraph.springernature.com/pub.10.1134/s1063782620090195

    DOI

    http://dx.doi.org/10.1134/s1063782620090195

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    63 method
    64 microwave absorption
    65 microwave semiconductor devices
    66 millimeter wavelength range
    67 optimization
    68 output
    69 precise method
    70 range
    71 reflectance
    72 results
    73 semiconductor crystals
    74 semiconductor devices
    75 semiconductors
    76 silicon
    77 single-crystal GaAs substrate
    78 single-crystal silicon
    79 substrate
    80 tan
    81 tanδ
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