Ontology type: schema:ScholarlyArticle
2020-09-08
AUTHORSA. I. Khrebtov, A. S. Kulagina, V. V. Danilov, E. S. Gromova, I. D. Skurlov, A. P. Litvin, R. R. Reznik, I. V. Shtrom, G. E. Cirlin
ABSTRACTThe results of studies of the decay photodynamics of excited states in a hybrid semiconductor nanostructure formed as an array of InP nanowires with an InAsP nanoinsert that are passivated with a quasi-Langmuir trioctylphosphine oxide (TOPO) layer containing colloidal CdSe/ZnS quantum dots are presented. The luminescence spectra and kinetics of InAsP nanoinserts in the near-infrared region at temperatures of 80 and 293 K are recorded. The formation of the layer of TOPO-CdSe/ZnS quantum dots at the surface of InP/InAsP/InP nanowires brings about an increase in the duration of radiative recombination and the appearance of its dependence on temperature. It is established that, in the synthesized structure, there is a type-II heterojunction at the interface between the InAsP nanoinsert and the InP bulk. The influence of interphase processes on an increase in the duration of emission is discussed. More... »
PAGES1141-1146
http://scigraph.springernature.com/pub.10.1134/s1063782620090158
DOIhttp://dx.doi.org/10.1134/s1063782620090158
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