Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures View Full Text


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Article Info

DATE

2020-04-28

AUTHORS

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsentiev, S. A. Kukushkin

ABSTRACT

Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (por-Si) transition layer on the optical properties of GaN layers grown on SiC/por-Si/c-Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studied. It is shown for the first time that the MBE PA technology of the synthesis of GaN on a virtual SiC/por-Si/c-Si substrate provides a means for producing a GaN film of much higher structural and optical quality at a much lower growth temperature compared to those in similar studies, in which growth on porous Si substrates is demonstrated. The use of a por-Si layer makes it possible to improve the structural and morphological properties of the GaN epitaxial layer and to attain unique optical and electrical characteristics of the layer. The data obtained in the study will serve as an important basis for understanding the foundations of the physics of GaN/SiC/por-Si nanoheterostructures and for promoting their potential use in optoelectronics. More... »

PAGES

417-425

References to SciGraph publications

  • 2018-05-25. Two yellow luminescence bands in undoped GaN in SCIENTIFIC REPORTS
  • 2018-11-07. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2010-06-20. Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111) in NANOSCALE RESEARCH LETTERS
  • 2014-08-06. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review in PHYSICS OF THE SOLID STATE
  • 2011-11-22. The effect of sub-band gap photon illumination on the properties of GaN layers grown on Si(111) by MBE in JOURNAL OF NANOPARTICLE RESEARCH
  • 2015-07-01. Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon in SEMICONDUCTORS
  • 2019-07-02. Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2015-06-02. Direct growth of freestanding GaN on C-face SiC by HVPE in SCIENTIFIC REPORTS
  • 2018-12-24. Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures in SEMICONDUCTORS
  • 2014-08-06. Structural and optical properties of heavily doped AlxGa1 − xAs1 − yPy:Mg alloys produced by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2003-08. Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon in SEMICONDUCTORS
  • 2012-09. Chemical modification of porous and corrugated silicon surfaces in polyacrylic acid solutions in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2014-02-27. Optical characteristics of porous silicon structures in TECHNICAL PHYSICS
  • 2018-07-06. Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy in SEMICONDUCTORS
  • 1997-07. Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface in JETP LETTERS
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    http://scigraph.springernature.com/pub.10.1134/s1063782620040168

    DOI

    http://dx.doi.org/10.1134/s1063782620040168

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    https://app.dimensions.ai/details/publication/pub.1127177737


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