Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters View Full Text


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Article Info

DATE

2020-04-28

AUTHORS

V. M. Emelyanov, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Nakhimovich, R. A. Salii, M. Z. Shvarts

ABSTRACT

The current–voltage characteristics of InxGa1 –xAs/GaAs metamorphic photovoltaic converters with built-in n-InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0.025–0.24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–n:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0.32–0.36 eV and a substantial width. To suppress this effect, the technology of the Te doping of n-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm2. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed. More... »

PAGES

476-483

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782620040053

DOI

http://dx.doi.org/10.1134/s1063782620040053

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1127166550


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