Ontology type: schema:ScholarlyArticle
2020-03
AUTHORSV. S. Kalinovskii, E. V. Kontrosh, G. V. Klimko, S. V. Ivanov, V. S. Yuferev, B. Y. Ber, D. Y. Kazantsev, V. M. Andreev
ABSTRACTThe creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped i-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The p–i–n-GaAs/Al0.2Ga0.8As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm2 are grown by molecular-beam epitaxy. More... »
PAGES355-361
http://scigraph.springernature.com/pub.10.1134/s1063782620030112
DOIhttp://dx.doi.org/10.1134/s1063782620030112
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