Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2020-01

AUTHORS

N. D. Il’inskaya, N. M. Lebedeva, Yu. M. Zadiranov, P. A. Ivanov, T. P. Samsonova, O. I. Kon’kov, A. S. Potapov

ABSTRACT

Methods of micro-profiling of 4H-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45°) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4H-SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated. More... »

PAGES

144-149

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782620010108

DOI

http://dx.doi.org/10.1134/s1063782620010108

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1125347297


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