InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) View Full Text


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Article Info

DATE

2019-12-04

AUTHORS

A. M. Nadtochiy, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, A. E. Zhukov, T. Denneulin, N. Cherkashin, V. A. Shchukin, N. N. Ledentsov

ABSTRACT

Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case. More... »

PAGES

1699-1704

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619160218

DOI

http://dx.doi.org/10.1134/s1063782619160218

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123131482


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0205", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Optical Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nadtochiy", 
        "givenName": "A. M.", 
        "id": "sg:person.01114776037.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01114776037.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shernyakov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.014411372640.54", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kulagina", 
        "givenName": "M. M.", 
        "id": "sg:person.07410421673.58", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Payusov", 
        "givenName": "A. S.", 
        "id": "sg:person.01260404165.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01260404165.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gordeev", 
        "givenName": "N. Yu.", 
        "id": "sg:person.010536465737.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Maximov", 
        "givenName": "M. V.", 
        "id": "sg:person.015106205514.66", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhukov", 
        "givenName": "A. E.", 
        "id": "sg:person.011315427765.17", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CEMES-CNRS, Cedex 4, 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Peter Gr\u00fcnber Institut (PGI-5), 52425, J\u00fclich, Germany", 
            "CEMES-CNRS, Cedex 4, 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Denneulin", 
        "givenName": "T.", 
        "id": "sg:person.0676405325.49", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0676405325.49"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "CEMES-CNRS, Cedex 4, 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "CEMES-CNRS, Cedex 4, 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N.", 
        "id": "sg:person.01236734145.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "VI Systems GmbH, 10623, Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.439107.8", 
          "name": [
            "VI Systems GmbH, 10623, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shchukin", 
        "givenName": "V. A.", 
        "id": "sg:person.012362651407.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012362651407.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "VI Systems GmbH, 10623, Berlin, Germany", 
          "id": "http://www.grid.ac/institutes/grid.439107.8", 
          "name": [
            "VI Systems GmbH, 10623, Berlin, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ledentsov", 
        "givenName": "N. N.", 
        "id": "sg:person.014140400702.37", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s10103-009-0716-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022418412", 
          "https://doi.org/10.1007/s10103-009-0716-x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11664-001-0084-1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049609546", 
          "https://doi.org/10.1007/s11664-001-0084-1"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12-04", 
    "datePublishedReg": "2019-12-04", 
    "description": "Lasing in the orange spectral range (599\u2013605 nm) is demonstrated for (AlxGa1 \u2013x)0.5In0.5P\u2013GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 \u2013xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782619160218", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "metalorganic vapor phase epitaxy", 
      "nonequilibrium electrons", 
      "high differential quantum efficiency", 
      "low threshold current density", 
      "active region", 
      "catastrophic optical degradation", 
      "differential quantum efficiency", 
      "optical output power", 
      "threshold current density", 
      "small internal loss", 
      "GaAs injection lasers", 
      "orange spectral range", 
      "vapor phase epitaxy", 
      "injection lasers", 
      "optical range", 
      "GaAs laser", 
      "optical degradation", 
      "quantum efficiency", 
      "spectral range", 
      "laser", 
      "quantum dots", 
      "internal losses", 
      "output power", 
      "electrons", 
      "high gas content", 
      "current density", 
      "InxGa1-xP", 
      "gas content", 
      "solid solution", 
      "high barrier", 
      "AlxGa1", 
      "mirror", 
      "substrate", 
      "GaAs", 
      "epitaxy", 
      "dots", 
      "layer", 
      "structure", 
      "regime", 
      "range", 
      "density", 
      "region", 
      "efficiency", 
      "barriers", 
      "power", 
      "leakage", 
      "degradation", 
      "solution", 
      "content", 
      "loss", 
      "first case", 
      "cases"
    ], 
    "name": "InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)", 
    "pagination": "1699-1704", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1123131482"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782619160218"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782619160218", 
      "https://app.dimensions.ai/details/publication/pub.1123131482"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-09-02T16:04", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220902/entities/gbq_results/article/article_831.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782619160218"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

197 TRIPLES      21 PREDICATES      78 URIs      68 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782619160218 schema:about anzsrc-for:02
2 anzsrc-for:0205
3 schema:author N514d1e49a6bb4dd5859bc9a5c02e3dd9
4 schema:citation sg:pub.10.1007/s10103-009-0716-x
5 sg:pub.10.1007/s11664-001-0084-1
6 schema:datePublished 2019-12-04
7 schema:datePublishedReg 2019-12-04
8 schema:description Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
9 schema:genre article
10 schema:isAccessibleForFree false
11 schema:isPartOf N9aee0f5c2f9347a8bbba1ca4c907b700
12 Na07c51dcae034f529dbedf53ce49cbf2
13 sg:journal.1136692
14 schema:keywords AlxGa1
15 GaAs
16 GaAs injection lasers
17 GaAs laser
18 InxGa1-xP
19 active region
20 barriers
21 cases
22 catastrophic optical degradation
23 content
24 current density
25 degradation
26 density
27 differential quantum efficiency
28 dots
29 efficiency
30 electrons
31 epitaxy
32 first case
33 gas content
34 high barrier
35 high differential quantum efficiency
36 high gas content
37 injection lasers
38 internal losses
39 laser
40 layer
41 leakage
42 loss
43 low threshold current density
44 metalorganic vapor phase epitaxy
45 mirror
46 nonequilibrium electrons
47 optical degradation
48 optical output power
49 optical range
50 orange spectral range
51 output power
52 power
53 quantum dots
54 quantum efficiency
55 range
56 regime
57 region
58 small internal loss
59 solid solution
60 solution
61 spectral range
62 structure
63 substrate
64 threshold current density
65 vapor phase epitaxy
66 schema:name InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
67 schema:pagination 1699-1704
68 schema:productId N05b8172eb4c54f4eb0c4fe08ac8159cc
69 N1ee65a97f7ee492ab3dbca141d3ef85b
70 schema:sameAs https://app.dimensions.ai/details/publication/pub.1123131482
71 https://doi.org/10.1134/s1063782619160218
72 schema:sdDatePublished 2022-09-02T16:04
73 schema:sdLicense https://scigraph.springernature.com/explorer/license/
74 schema:sdPublisher Nf307f7f026f7497abd0fb416c9ff08c4
75 schema:url https://doi.org/10.1134/s1063782619160218
76 sgo:license sg:explorer/license/
77 sgo:sdDataset articles
78 rdf:type schema:ScholarlyArticle
79 N05b8172eb4c54f4eb0c4fe08ac8159cc schema:name dimensions_id
80 schema:value pub.1123131482
81 rdf:type schema:PropertyValue
82 N14294cf5348f4a1d9dfe127117e06c6e rdf:first sg:person.010536465737.08
83 rdf:rest N18347445d42a447ab6e37deb3283e151
84 N18347445d42a447ab6e37deb3283e151 rdf:first sg:person.015106205514.66
85 rdf:rest Nd1a724f45aac4e01a1ead699b250a5e4
86 N1ee65a97f7ee492ab3dbca141d3ef85b schema:name doi
87 schema:value 10.1134/s1063782619160218
88 rdf:type schema:PropertyValue
89 N514d1e49a6bb4dd5859bc9a5c02e3dd9 rdf:first sg:person.01114776037.19
90 rdf:rest Nc02ec138c2db4ec8b6d6e17f1d9ac8ea
91 N65ef0391365646c2be4dbce68f35811b rdf:first sg:person.012362651407.59
92 rdf:rest Na7cabc64a9c5490a8f18802d1c40d754
93 N9aee0f5c2f9347a8bbba1ca4c907b700 schema:issueNumber 12
94 rdf:type schema:PublicationIssue
95 Na07c51dcae034f529dbedf53ce49cbf2 schema:volumeNumber 53
96 rdf:type schema:PublicationVolume
97 Na67c56b977234e959df87906b468c344 rdf:first sg:person.01260404165.29
98 rdf:rest N14294cf5348f4a1d9dfe127117e06c6e
99 Na7cabc64a9c5490a8f18802d1c40d754 rdf:first sg:person.014140400702.37
100 rdf:rest rdf:nil
101 Nae69ff6844a849798ff12271dc488664 rdf:first sg:person.01236734145.04
102 rdf:rest N65ef0391365646c2be4dbce68f35811b
103 Nb81a5fb5c2de4b11bbb05688e7286a7d rdf:first sg:person.0676405325.49
104 rdf:rest Nae69ff6844a849798ff12271dc488664
105 Nc02ec138c2db4ec8b6d6e17f1d9ac8ea rdf:first sg:person.014411372640.54
106 rdf:rest Ne5cd6f30db1c44e08100be0f7423ff17
107 Nd1a724f45aac4e01a1ead699b250a5e4 rdf:first sg:person.011315427765.17
108 rdf:rest Nb81a5fb5c2de4b11bbb05688e7286a7d
109 Ne5cd6f30db1c44e08100be0f7423ff17 rdf:first sg:person.07410421673.58
110 rdf:rest Na67c56b977234e959df87906b468c344
111 Nf307f7f026f7497abd0fb416c9ff08c4 schema:name Springer Nature - SN SciGraph project
112 rdf:type schema:Organization
113 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
114 schema:name Physical Sciences
115 rdf:type schema:DefinedTerm
116 anzsrc-for:0205 schema:inDefinedTermSet anzsrc-for:
117 schema:name Optical Physics
118 rdf:type schema:DefinedTerm
119 sg:journal.1136692 schema:issn 1063-7826
120 1090-6479
121 schema:name Semiconductors
122 schema:publisher Pleiades Publishing
123 rdf:type schema:Periodical
124 sg:person.010536465737.08 schema:affiliation grid-institutes:grid.423485.c
125 schema:familyName Gordeev
126 schema:givenName N. Yu.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010536465737.08
128 rdf:type schema:Person
129 sg:person.01114776037.19 schema:affiliation grid-institutes:grid.35135.31
130 schema:familyName Nadtochiy
131 schema:givenName A. M.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01114776037.19
133 rdf:type schema:Person
134 sg:person.011315427765.17 schema:affiliation grid-institutes:grid.35135.31
135 schema:familyName Zhukov
136 schema:givenName A. E.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011315427765.17
138 rdf:type schema:Person
139 sg:person.012362651407.59 schema:affiliation grid-institutes:grid.439107.8
140 schema:familyName Shchukin
141 schema:givenName V. A.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012362651407.59
143 rdf:type schema:Person
144 sg:person.01236734145.04 schema:affiliation grid-institutes:None
145 schema:familyName Cherkashin
146 schema:givenName N.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04
148 rdf:type schema:Person
149 sg:person.01260404165.29 schema:affiliation grid-institutes:grid.423485.c
150 schema:familyName Payusov
151 schema:givenName A. S.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01260404165.29
153 rdf:type schema:Person
154 sg:person.014140400702.37 schema:affiliation grid-institutes:grid.439107.8
155 schema:familyName Ledentsov
156 schema:givenName N. N.
157 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014140400702.37
158 rdf:type schema:Person
159 sg:person.014411372640.54 schema:affiliation grid-institutes:grid.423485.c
160 schema:familyName Shernyakov
161 schema:givenName Yu. M.
162 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014411372640.54
163 rdf:type schema:Person
164 sg:person.015106205514.66 schema:affiliation grid-institutes:grid.35135.31
165 schema:familyName Maximov
166 schema:givenName M. V.
167 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015106205514.66
168 rdf:type schema:Person
169 sg:person.0676405325.49 schema:affiliation grid-institutes:None
170 schema:familyName Denneulin
171 schema:givenName T.
172 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0676405325.49
173 rdf:type schema:Person
174 sg:person.07410421673.58 schema:affiliation grid-institutes:grid.423485.c
175 schema:familyName Kulagina
176 schema:givenName M. M.
177 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07410421673.58
178 rdf:type schema:Person
179 sg:pub.10.1007/s10103-009-0716-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1022418412
180 https://doi.org/10.1007/s10103-009-0716-x
181 rdf:type schema:CreativeWork
182 sg:pub.10.1007/s11664-001-0084-1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049609546
183 https://doi.org/10.1007/s11664-001-0084-1
184 rdf:type schema:CreativeWork
185 grid-institutes:None schema:alternateName CEMES-CNRS, Cedex 4, 31055, Toulouse, France
186 schema:name CEMES-CNRS, Cedex 4, 31055, Toulouse, France
187 Peter Grünber Institut (PGI-5), 52425, Jülich, Germany
188 rdf:type schema:Organization
189 grid-institutes:grid.35135.31 schema:alternateName St. Petersburg Academic University, 194021, St. Petersburg, Russia
190 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
191 rdf:type schema:Organization
192 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
193 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
194 rdf:type schema:Organization
195 grid-institutes:grid.439107.8 schema:alternateName VI Systems GmbH, 10623, Berlin, Germany
196 schema:name VI Systems GmbH, 10623, Berlin, Germany
197 rdf:type schema:Organization
 




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