Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-12-04

AUTHORS

D. V. Mokhov, T. N. Berezovskaya, E. V. Nikitina, K. Yu. Shubina, A. M. Mizerov, A. D. Bouravleuv

ABSTRACT

The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are reported. It is shown that the etching rates of layers with different polarities are markedly different. At the same time, the use of gold-based masks instead of titanium-based ones for the etching of GaN layers also provides a means for increasing the rate of layer etching. More... »

PAGES

1717-1723

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619160176

DOI

http://dx.doi.org/10.1134/s1063782619160176

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123131478


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mokhov", 
        "givenName": "D. V.", 
        "id": "sg:person.013317604251.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013317604251.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Berezovskaya", 
        "givenName": "T. N.", 
        "id": "sg:person.07460553147.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07460553147.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikitina", 
        "givenName": "E. V.", 
        "id": "sg:person.012555247104.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shubina", 
        "givenName": "K. Yu.", 
        "id": "sg:person.015366243747.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "A. M.", 
        "id": "sg:person.011570622443.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Ioffe Institute, 194021, St. Petersburg, Russia", 
            "St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouravleuv", 
        "givenName": "A. D.", 
        "id": "sg:person.012577710235.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782618120175", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1109764853", 
          "https://doi.org/10.1134/s1063782618120175"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12-04", 
    "datePublishedReg": "2019-12-04", 
    "description": "The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are reported. It is shown that the etching rates of layers with different polarities are markedly different. At the same time, the use of gold-based masks instead of titanium-based ones for the etching of GaN layers also provides a means for increasing the rate of layer etching.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782619160176", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "GaN layers", 
      "polar GaN layers", 
      "GaN epitaxial layers", 
      "photochemical etching process", 
      "etching process", 
      "molecular beam epitaxy", 
      "plasma activation", 
      "layer etching", 
      "epitaxial layers", 
      "external voltage", 
      "etching", 
      "layer", 
      "photochemical etching", 
      "voltage", 
      "epitaxy", 
      "gas", 
      "results of studies", 
      "different polarity", 
      "same time", 
      "process", 
      "structure", 
      "mask", 
      "results", 
      "nitrogen", 
      "rate", 
      "polarity", 
      "time", 
      "use", 
      "one", 
      "means", 
      "study", 
      "activation"
    ], 
    "name": "Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers", 
    "pagination": "1717-1723", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1123131478"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782619160176"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782619160176", 
      "https://app.dimensions.ai/details/publication/pub.1123131478"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_823.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782619160176"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782619160176'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782619160176'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782619160176'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782619160176'


 

This table displays all metadata directly associated to this object as RDF triples.

142 TRIPLES      22 PREDICATES      59 URIs      49 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782619160176 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N846cb7ff12ac4cb2b6c95a7eee730bbf
5 schema:citation sg:pub.10.1134/s1063782618120175
6 schema:datePublished 2019-12-04
7 schema:datePublishedReg 2019-12-04
8 schema:description The results of studies of photochemical etching processes, which were carried out without applying external voltage, for structures with Ga- and N-polar GaN layers synthesized by molecular-beam epitaxy with the plasma activation of nitrogen are reported. It is shown that the etching rates of layers with different polarities are markedly different. At the same time, the use of gold-based masks instead of titanium-based ones for the etching of GaN layers also provides a means for increasing the rate of layer etching.
9 schema:genre article
10 schema:inLanguage en
11 schema:isAccessibleForFree false
12 schema:isPartOf N3b6334ac40d94e2da2481e5892cd60c1
13 Nd4e8d2237b8d4feda99aae4ffefba8dd
14 sg:journal.1136692
15 schema:keywords GaN epitaxial layers
16 GaN layers
17 activation
18 different polarity
19 epitaxial layers
20 epitaxy
21 etching
22 etching process
23 external voltage
24 gas
25 layer
26 layer etching
27 mask
28 means
29 molecular beam epitaxy
30 nitrogen
31 one
32 photochemical etching
33 photochemical etching process
34 plasma activation
35 polar GaN layers
36 polarity
37 process
38 rate
39 results
40 results of studies
41 same time
42 structure
43 study
44 time
45 use
46 voltage
47 schema:name Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
48 schema:pagination 1717-1723
49 schema:productId N9ddf88e12fe647878b8821ec952b0ccb
50 Nd27a64dd04114b5d8b64af5aba5b5d8c
51 schema:sameAs https://app.dimensions.ai/details/publication/pub.1123131478
52 https://doi.org/10.1134/s1063782619160176
53 schema:sdDatePublished 2022-05-20T07:35
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher N3981c0eb9c6d46c69207197f21b91aeb
56 schema:url https://doi.org/10.1134/s1063782619160176
57 sgo:license sg:explorer/license/
58 sgo:sdDataset articles
59 rdf:type schema:ScholarlyArticle
60 N0ac3da7701664e80883e8b60d0a46918 rdf:first sg:person.012555247104.74
61 rdf:rest Ncb502d4233224c61bfa0cab1c3aa6c37
62 N3981c0eb9c6d46c69207197f21b91aeb schema:name Springer Nature - SN SciGraph project
63 rdf:type schema:Organization
64 N3b6334ac40d94e2da2481e5892cd60c1 schema:volumeNumber 53
65 rdf:type schema:PublicationVolume
66 N46f625b0f801443d9293f3d3ffac990b rdf:first sg:person.012577710235.67
67 rdf:rest rdf:nil
68 N846cb7ff12ac4cb2b6c95a7eee730bbf rdf:first sg:person.013317604251.22
69 rdf:rest Ncedd72194bfc4f32932ace13ba882383
70 N9ddf88e12fe647878b8821ec952b0ccb schema:name dimensions_id
71 schema:value pub.1123131478
72 rdf:type schema:PropertyValue
73 Na7f94aa07dd146ed8c61007524101f53 rdf:first sg:person.011570622443.35
74 rdf:rest N46f625b0f801443d9293f3d3ffac990b
75 Ncb502d4233224c61bfa0cab1c3aa6c37 rdf:first sg:person.015366243747.29
76 rdf:rest Na7f94aa07dd146ed8c61007524101f53
77 Ncedd72194bfc4f32932ace13ba882383 rdf:first sg:person.07460553147.33
78 rdf:rest N0ac3da7701664e80883e8b60d0a46918
79 Nd27a64dd04114b5d8b64af5aba5b5d8c schema:name doi
80 schema:value 10.1134/s1063782619160176
81 rdf:type schema:PropertyValue
82 Nd4e8d2237b8d4feda99aae4ffefba8dd schema:issueNumber 12
83 rdf:type schema:PublicationIssue
84 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
85 schema:name Physical Sciences
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
88 schema:name Condensed Matter Physics
89 rdf:type schema:DefinedTerm
90 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
91 schema:name Quantum Physics
92 rdf:type schema:DefinedTerm
93 sg:journal.1136692 schema:issn 1063-7826
94 1090-6479
95 schema:name Semiconductors
96 schema:publisher Pleiades Publishing
97 rdf:type schema:Periodical
98 sg:person.011570622443.35 schema:affiliation grid-institutes:grid.4886.2
99 schema:familyName Mizerov
100 schema:givenName A. M.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35
102 rdf:type schema:Person
103 sg:person.012555247104.74 schema:affiliation grid-institutes:grid.4886.2
104 schema:familyName Nikitina
105 schema:givenName E. V.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74
107 rdf:type schema:Person
108 sg:person.012577710235.67 schema:affiliation grid-institutes:grid.15447.33
109 schema:familyName Bouravleuv
110 schema:givenName A. D.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67
112 rdf:type schema:Person
113 sg:person.013317604251.22 schema:affiliation grid-institutes:grid.4886.2
114 schema:familyName Mokhov
115 schema:givenName D. V.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013317604251.22
117 rdf:type schema:Person
118 sg:person.015366243747.29 schema:affiliation grid-institutes:grid.4886.2
119 schema:familyName Shubina
120 schema:givenName K. Yu.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015366243747.29
122 rdf:type schema:Person
123 sg:person.07460553147.33 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Berezovskaya
125 schema:givenName T. N.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07460553147.33
127 rdf:type schema:Person
128 sg:pub.10.1134/s1063782618120175 schema:sameAs https://app.dimensions.ai/details/publication/pub.1109764853
129 https://doi.org/10.1134/s1063782618120175
130 rdf:type schema:CreativeWork
131 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia
132 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
133 St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
134 St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia
135 rdf:type schema:Organization
136 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
137 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
138 St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
139 rdf:type schema:Organization
140 grid-institutes:grid.4886.2 schema:alternateName St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
141 schema:name St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
142 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...