Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs View Full Text


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Article Info

DATE

2019-12-04

AUTHORS

A. A. Lebedev, M. E. Levinshtein, P. A. Ivanov, V. V. Kozlovski, A. M. Strel’chuk, E. I. Shabunina, L. Fursin

ABSTRACT

Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1. More... »

PAGES

1568-1572

References to SciGraph publications

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URI

http://scigraph.springernature.com/pub.10.1134/s1063782619160140

DOI

http://dx.doi.org/10.1134/s1063782619160140

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1123131475


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Levinshtein", 
        "givenName": "M. E.", 
        "id": "sg:person.013715361533.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "P. A.", 
        "id": "sg:person.010230425734.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Strel\u2019chuk", 
        "givenName": "A. M.", 
        "id": "sg:person.015012127015.53", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shabunina", 
        "givenName": "E. I.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "United Silicon Carbide, Inc., NJ 08852, Suite E Monmouth Junction, USA", 
          "id": "http://www.grid.ac/institutes/grid.439015.a", 
          "name": [
            "United Silicon Carbide, Inc., NJ 08852, Suite E Monmouth Junction, USA"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fursin", 
        "givenName": "L.", 
        "id": "sg:person.010235240251.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010235240251.08"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782614080156", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040897109", 
          "https://doi.org/10.1134/s1063782614080156"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/978-1-4615-8103-1_3", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017591681", 
          "https://doi.org/10.1007/978-1-4615-8103-1_3"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-12-04", 
    "datePublishedReg": "2019-12-04", 
    "description": "Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses \u03a6 of 1012 to 6 \u00d7 1013 cm\u20132. The frequency dependence of the spectral noise density SI follows the law SI \u221d 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm\u20132 \u2264 \u03a6 \u2264 6 \u00d7 1013 cm\u20132, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv \u2248 5.4 \u00d7 1018 cm\u20133 eV\u20131. At \u03a6 = 6 \u00d7 1013 cm\u20132, Ntv\u00a0increases to ~7.2 \u00d7 1019 cm\u20133 eV\u20131.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782619160140", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "12", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "low-frequency noise", 
      "semiconductor field-effect transistors", 
      "frequency noise", 
      "low frequency noise level", 
      "power SiC MOSFET", 
      "field-effect transistors", 
      "eV-1", 
      "SiC MOSFETs", 
      "gate oxide", 
      "trap density", 
      "unirradiated structures", 
      "noise level changes", 
      "frequency range", 
      "noise spectroscopy", 
      "room temperature", 
      "orders of magnitude", 
      "Si", 
      "noise level", 
      "frequency dependence", 
      "good accuracy", 
      "effect of irradiation", 
      "MOSFETs", 
      "noise", 
      "transistors", 
      "saturation", 
      "irradiation", 
      "oxide", 
      "temperature", 
      "range 1012", 
      "Hz", 
      "NTV", 
      "power", 
      "density", 
      "level changes", 
      "accuracy", 
      "output", 
      "spectroscopy", 
      "range", 
      "structure", 
      "dependence", 
      "magnitude", 
      "order", 
      "results", 
      "effect", 
      "protons", 
      "changes", 
      "correlation", 
      "levels", 
      "doses"
    ], 
    "name": "Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs", 
    "pagination": "1568-1572", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1123131475"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782619160140"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782619160140", 
      "https://app.dimensions.ai/details/publication/pub.1123131475"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:36", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_824.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782619160140"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

166 TRIPLES      22 PREDICATES      77 URIs      66 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782619160140 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N4af0802f1bfe4db0af781cb77148467a
5 schema:citation sg:pub.10.1007/978-1-4615-8103-1_3
6 sg:pub.10.1134/s1063782614080156
7 schema:datePublished 2019-12-04
8 schema:datePublishedReg 2019-12-04
9 schema:description Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N3f62b8f73d894ac1bf670d844dd16d93
14 Nb5a8a0b1e1a840a4ad431460704aecf2
15 sg:journal.1136692
16 schema:keywords Hz
17 MOSFETs
18 NTV
19 Si
20 SiC MOSFETs
21 accuracy
22 changes
23 correlation
24 density
25 dependence
26 doses
27 eV-1
28 effect
29 effect of irradiation
30 field-effect transistors
31 frequency dependence
32 frequency noise
33 frequency range
34 gate oxide
35 good accuracy
36 irradiation
37 level changes
38 levels
39 low frequency noise level
40 low-frequency noise
41 magnitude
42 noise
43 noise level
44 noise level changes
45 noise spectroscopy
46 order
47 orders of magnitude
48 output
49 oxide
50 power
51 power SiC MOSFET
52 protons
53 range
54 range 1012
55 results
56 room temperature
57 saturation
58 semiconductor field-effect transistors
59 spectroscopy
60 structure
61 temperature
62 transistors
63 trap density
64 unirradiated structures
65 schema:name Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
66 schema:pagination 1568-1572
67 schema:productId N00cd78a134f14701beda4b70280752f7
68 Nb6ccaeee13dc40b48262a305e8439225
69 schema:sameAs https://app.dimensions.ai/details/publication/pub.1123131475
70 https://doi.org/10.1134/s1063782619160140
71 schema:sdDatePublished 2022-05-20T07:36
72 schema:sdLicense https://scigraph.springernature.com/explorer/license/
73 schema:sdPublisher N01b35d261f4e4b259ef6429954039ac6
74 schema:url https://doi.org/10.1134/s1063782619160140
75 sgo:license sg:explorer/license/
76 sgo:sdDataset articles
77 rdf:type schema:ScholarlyArticle
78 N00cd78a134f14701beda4b70280752f7 schema:name doi
79 schema:value 10.1134/s1063782619160140
80 rdf:type schema:PropertyValue
81 N01b35d261f4e4b259ef6429954039ac6 schema:name Springer Nature - SN SciGraph project
82 rdf:type schema:Organization
83 N0c892ba3f98c4f8b8a5bc60dbd73678e rdf:first sg:person.013715361533.07
84 rdf:rest N9e435763d4e348b1a258437266c939ef
85 N3f62b8f73d894ac1bf670d844dd16d93 schema:volumeNumber 53
86 rdf:type schema:PublicationVolume
87 N4af0802f1bfe4db0af781cb77148467a rdf:first sg:person.011264364575.18
88 rdf:rest N0c892ba3f98c4f8b8a5bc60dbd73678e
89 N7104e9aa47904f3791d7db137f00d73c rdf:first sg:person.015012127015.53
90 rdf:rest N99d20cdf47f748f89d33874e918250cd
91 N95189bff27ba426b860579ccea8fe239 schema:affiliation grid-institutes:grid.423485.c
92 schema:familyName Shabunina
93 schema:givenName E. I.
94 rdf:type schema:Person
95 N99d20cdf47f748f89d33874e918250cd rdf:first N95189bff27ba426b860579ccea8fe239
96 rdf:rest Ned9248a4fbea47caaf93c481c071b7e2
97 N9e435763d4e348b1a258437266c939ef rdf:first sg:person.010230425734.18
98 rdf:rest Nd9444da2cd0245f3993615c8712bdb7b
99 Nb5a8a0b1e1a840a4ad431460704aecf2 schema:issueNumber 12
100 rdf:type schema:PublicationIssue
101 Nb6ccaeee13dc40b48262a305e8439225 schema:name dimensions_id
102 schema:value pub.1123131475
103 rdf:type schema:PropertyValue
104 Nd9444da2cd0245f3993615c8712bdb7b rdf:first sg:person.011730241573.99
105 rdf:rest N7104e9aa47904f3791d7db137f00d73c
106 Ned9248a4fbea47caaf93c481c071b7e2 rdf:first sg:person.010235240251.08
107 rdf:rest rdf:nil
108 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
109 schema:name Physical Sciences
110 rdf:type schema:DefinedTerm
111 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
112 schema:name Condensed Matter Physics
113 rdf:type schema:DefinedTerm
114 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
115 schema:name Quantum Physics
116 rdf:type schema:DefinedTerm
117 sg:journal.1136692 schema:issn 1063-7826
118 1090-6479
119 schema:name Semiconductors
120 schema:publisher Pleiades Publishing
121 rdf:type schema:Periodical
122 sg:person.010230425734.18 schema:affiliation grid-institutes:grid.423485.c
123 schema:familyName Ivanov
124 schema:givenName P. A.
125 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010230425734.18
126 rdf:type schema:Person
127 sg:person.010235240251.08 schema:affiliation grid-institutes:grid.439015.a
128 schema:familyName Fursin
129 schema:givenName L.
130 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010235240251.08
131 rdf:type schema:Person
132 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
133 schema:familyName Lebedev
134 schema:givenName A. A.
135 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
136 rdf:type schema:Person
137 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
138 schema:familyName Kozlovski
139 schema:givenName V. V.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
141 rdf:type schema:Person
142 sg:person.013715361533.07 schema:affiliation grid-institutes:grid.423485.c
143 schema:familyName Levinshtein
144 schema:givenName M. E.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013715361533.07
146 rdf:type schema:Person
147 sg:person.015012127015.53 schema:affiliation grid-institutes:grid.423485.c
148 schema:familyName Strel’chuk
149 schema:givenName A. M.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015012127015.53
151 rdf:type schema:Person
152 sg:pub.10.1007/978-1-4615-8103-1_3 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017591681
153 https://doi.org/10.1007/978-1-4615-8103-1_3
154 rdf:type schema:CreativeWork
155 sg:pub.10.1134/s1063782614080156 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040897109
156 https://doi.org/10.1134/s1063782614080156
157 rdf:type schema:CreativeWork
158 grid-institutes:grid.32495.39 schema:alternateName Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
159 schema:name Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia
160 rdf:type schema:Organization
161 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
162 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
163 rdf:type schema:Organization
164 grid-institutes:grid.439015.a schema:alternateName United Silicon Carbide, Inc., NJ 08852, Suite E Monmouth Junction, USA
165 schema:name United Silicon Carbide, Inc., NJ 08852, Suite E Monmouth Junction, USA
166 rdf:type schema:Organization
 




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