Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-12

AUTHORS

A. V. Sakharov, S. O. Usov, S. N. Rodin, W. V. Lundin, A. F. Tsatsulnikov, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, M. A. Kaliteevskii, V. P. Evtikhiev

ABSTRACT

The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga+ ion beam (30 keV). More... »

PAGES

2121-2124

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261912025x

DOI

http://dx.doi.org/10.1134/s106378261912025x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1124348816


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