Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-11-06

AUTHORS

A. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, D. A. Sannikov, T. F. Yagafarov, A. E. Zhukov

ABSTRACT

The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures. More... »

PAGES

1489-1495

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619110150

DOI

http://dx.doi.org/10.1134/s1063782619110150

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1122368674


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