Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells View Full Text


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Article Info

DATE

2019-11-06

AUTHORS

M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts, N. A. Kalyuzhnyy

ABSTRACT

The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction. More... »

PAGES

1535-1539

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619110149

DOI

http://dx.doi.org/10.1134/s1063782619110149

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1122367308


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