Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-08-07

AUTHORS

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. M. Mizerov, I. N. Arsentyev, Harald Leiste, Monika Rinke

ABSTRACT

The possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy. More... »

PAGES

1120-1130

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619080165

DOI

http://dx.doi.org/10.1134/s1063782619080165

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1120187545


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