Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-07-02

AUTHORS

P. V. Seredin, A. S. Lenshin, D. S. Zolotukhin, D. L. Goloshchapov, A. M. Mizerov, I. N. Arsentyev, A. N. Beltyukov

ABSTRACT

The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar InxGa1 –xN structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates is shown. Using a set of structural-spectroscopic analytical methods, the electronic structure of the grown heterostructures, morphology, and optical properties are investigated, and the interrelations between them are established. It is shown that the use of a por-Si sublayer makes it possible to attain a more uniform distribution of diameters of InxGa1 –xN nanocolumns and to increase the photoluminescence intensity of the latter. More... »

PAGES

993-999

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619070224

DOI

http://dx.doi.org/10.1134/s1063782619070224

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1117697303


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