Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-07-02

AUTHORS

O. M. Korolkov, V. V. Kozlovski, A. A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang

ABSTRACT

The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 1016 cm–2. It is shown that the forward current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min. More... »

PAGES

975-978

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619070133

DOI

http://dx.doi.org/10.1134/s1063782619070133

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1117708318


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