Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-06-10

AUTHORS

V. V. Romanov, I. A. Belykh, E. V. Ivanov, P. A. Alekseev, N. D. Il’inskaya, Yu. P. Yakovlev

ABSTRACT

Asymmetrical double InAs/InAsSb/InAsSbP heterostructures are grown by metalorganic vapor phase epitaxy. Two types (A and B) of light-emitting diodes with wavelengths of 4.1 and 4.7 μm at the emission-spectrum maximum are formed from these heterostructures. The room-temperature I–V and electroluminescence characteristics of the light-emitting diodes are investigated. The emission powers of light-emitting diodes A and B in the quasi-continuous mode (at a frequency of 512 Hz) at a current of 250 mA are 24 and 15 μW, respectively. In the pulsed mode (at a frequency of 512 Hz and a pulse length of 1 μs), the emission powers of light-emitting diodes A and B at a current of 2.1 A reach 158 and 76 μW, respectively. The developed light-emitting diodes can be used as high-efficiency emission sources in optical absorption sensors for detecting carbon dioxide and monoxide gases in the atmosphere. More... »

PAGES

822-827

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619060174

DOI

http://dx.doi.org/10.1134/s1063782619060174

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1117021769


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