Ontology type: schema:ScholarlyArticle
2019-06-10
AUTHORSP. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova
ABSTRACTThe effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 1011 cm–2, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.” More... »
PAGES850-852
http://scigraph.springernature.com/pub.10.1134/s106378261906006x
DOIhttp://dx.doi.org/10.1134/s106378261906006x
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