Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation View Full Text


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Article Info

DATE

2019-06-10

AUTHORS

P. A. Ivanov, M. F. Kudoyarov, A. S. Potapov, T. P. Samsonova

ABSTRACT

The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 1011 cm–2, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.” More... »

PAGES

850-852

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261906006x

DOI

http://dx.doi.org/10.1134/s106378261906006x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1117021758


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