Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin ... View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-04

AUTHORS

V. A. Dobrov, V. V. Kozlovski, A. V. Mescheryakov, V. G. Usychenko, A. S. Chernova, E. I. Shabunina, N. M. Shmidt

ABSTRACT

It is established experimentally that noticeable changes in the I–V characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 1015 cm–2. The currents in the forward and reverse branches of the I–V characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the I–V characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 1015 cm–2. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 1015 cm–2. More... »

PAGES

545-551

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619040080

DOI

http://dx.doi.org/10.1134/s1063782619040080

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1113943708


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