Formation of Porous Silicon by Nanopowder Sintering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-04

AUTHORS

E. V. Astrova, V. B. Voronkov, A. V. Nashchekin, A. V. Parfeneva, D. A. Lozhkina, M. V. Tomkovich, Yu. A. Kukushkina

ABSTRACT

The technique of the electrochemical and photoelectrochemical etching of single-crystal silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and costly. An alternative method for forming bulk macroporous silicon is the high-temperature sintering of Si powder. The process of nanopowder sintering preliminarily subjected to dry cold compression (without binding additives) is investigated. The properties of the sintered material, including its microstructure, density, and electrical conductivity, are studied at different annealing temperature and time. Techniques for changing the porosity of the sintered samples and for determining of the interior surface area are discussed. More... »

PAGES

530-539

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619040031

DOI

http://dx.doi.org/10.1134/s1063782619040031

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1113939825


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Astrova", 
        "givenName": "E. V.", 
        "id": "sg:person.016627712637.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016627712637.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Voronkov", 
        "givenName": "V. B.", 
        "id": "sg:person.012736206703.22", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012736206703.22"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nashchekin", 
        "givenName": "A. V.", 
        "id": "sg:person.01217702577.48", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01217702577.48"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Parfeneva", 
        "givenName": "A. V.", 
        "id": "sg:person.014562362657.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014562362657.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lozhkina", 
        "givenName": "D. A.", 
        "id": "sg:person.011601005537.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601005537.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tomkovich", 
        "givenName": "M. V.", 
        "id": "sg:person.07632067207.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07632067207.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kukushkina", 
        "givenName": "Yu. A.", 
        "id": "sg:person.014416516426.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014416516426.81"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782606100174", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1021878645", 
          "https://doi.org/10.1134/s1063782606100174"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/srep01919", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006040750", 
          "https://doi.org/10.1038/srep01919"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf00355891", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022352441", 
          "https://doi.org/10.1007/bf00355891"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782617090032", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1091423546", 
          "https://doi.org/10.1134/s1063782617090032"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/bf00584875", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032782191", 
          "https://doi.org/10.1007/bf00584875"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-04", 
    "datePublishedReg": "2019-04-01", 
    "description": "The technique of the electrochemical and photoelectrochemical etching of single-crystal silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and costly. An alternative method for forming bulk macroporous silicon is the high-temperature sintering of Si powder. The process of nanopowder sintering preliminarily subjected to dry cold compression (without binding additives) is investigated. The properties of the sintered material, including its microstructure, density, and electrical conductivity, are studied at different annealing temperature and time. Techniques for changing the porosity of the sintered samples and for determining of the interior surface area are discussed.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782619040031", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "single crystal silicon wafers", 
      "high-temperature sintering", 
      "macroporous silicon layers", 
      "different annealing temperatures", 
      "Si powder", 
      "interior surface area", 
      "nanopowder sintering", 
      "silicon wafers", 
      "silicon layer", 
      "sintered samples", 
      "annealing temperature", 
      "macroporous silicon", 
      "photoelectrochemical etching", 
      "electrical conductivity", 
      "cold compression", 
      "sintering", 
      "porous silicon", 
      "surface area", 
      "silicon", 
      "wafers", 
      "microstructure", 
      "porosity", 
      "nanopowders", 
      "powder", 
      "etching", 
      "conductivity", 
      "layer", 
      "temperature", 
      "technique", 
      "alternative method", 
      "materials", 
      "compression", 
      "properties", 
      "density", 
      "process", 
      "method", 
      "formation", 
      "time", 
      "area", 
      "samples", 
      "bulk macroporous silicon", 
      "process of nanopowder"
    ], 
    "name": "Formation of Porous Silicon by Nanopowder Sintering", 
    "pagination": "530-539", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1113939825"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782619040031"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782619040031", 
      "https://app.dimensions.ai/details/publication/pub.1113939825"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-01-01T18:50", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_810.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782619040031"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782619040031'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782619040031'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782619040031'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782619040031'


 

This table displays all metadata directly associated to this object as RDF triples.

166 TRIPLES      22 PREDICATES      74 URIs      60 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782619040031 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N0ba72f733c0848218b418297aae6efab
5 schema:citation sg:pub.10.1007/bf00355891
6 sg:pub.10.1007/bf00584875
7 sg:pub.10.1038/srep01919
8 sg:pub.10.1134/s1063782606100174
9 sg:pub.10.1134/s1063782617090032
10 schema:datePublished 2019-04
11 schema:datePublishedReg 2019-04-01
12 schema:description The technique of the electrochemical and photoelectrochemical etching of single-crystal silicon wafers commonly used to fabricate macroporous silicon layers is inefficient and costly. An alternative method for forming bulk macroporous silicon is the high-temperature sintering of Si powder. The process of nanopowder sintering preliminarily subjected to dry cold compression (without binding additives) is investigated. The properties of the sintered material, including its microstructure, density, and electrical conductivity, are studied at different annealing temperature and time. Techniques for changing the porosity of the sintered samples and for determining of the interior surface area are discussed.
13 schema:genre article
14 schema:inLanguage en
15 schema:isAccessibleForFree false
16 schema:isPartOf N4b8dae0e61774510b23cdde3a77170e2
17 N861bf9f39ee743938f3d738bacb46d17
18 sg:journal.1136692
19 schema:keywords Si powder
20 alternative method
21 annealing temperature
22 area
23 bulk macroporous silicon
24 cold compression
25 compression
26 conductivity
27 density
28 different annealing temperatures
29 electrical conductivity
30 etching
31 formation
32 high-temperature sintering
33 interior surface area
34 layer
35 macroporous silicon
36 macroporous silicon layers
37 materials
38 method
39 microstructure
40 nanopowder sintering
41 nanopowders
42 photoelectrochemical etching
43 porosity
44 porous silicon
45 powder
46 process
47 process of nanopowder
48 properties
49 samples
50 silicon
51 silicon layer
52 silicon wafers
53 single crystal silicon wafers
54 sintered samples
55 sintering
56 surface area
57 technique
58 temperature
59 time
60 wafers
61 schema:name Formation of Porous Silicon by Nanopowder Sintering
62 schema:pagination 530-539
63 schema:productId N7412016e76e8493485c9f1d94cd2e24a
64 Nbe8ef6a51646470c9be1a25c935fa69a
65 schema:sameAs https://app.dimensions.ai/details/publication/pub.1113939825
66 https://doi.org/10.1134/s1063782619040031
67 schema:sdDatePublished 2022-01-01T18:50
68 schema:sdLicense https://scigraph.springernature.com/explorer/license/
69 schema:sdPublisher N94b11de68801447798bc631e44624d27
70 schema:url https://doi.org/10.1134/s1063782619040031
71 sgo:license sg:explorer/license/
72 sgo:sdDataset articles
73 rdf:type schema:ScholarlyArticle
74 N0ba72f733c0848218b418297aae6efab rdf:first sg:person.016627712637.31
75 rdf:rest N17127887142b4682966a53e30d33aa14
76 N17127887142b4682966a53e30d33aa14 rdf:first sg:person.012736206703.22
77 rdf:rest N4f90fa04f08645d79c72a43267855ee3
78 N27237498dff949038454adfe36b35032 rdf:first sg:person.011601005537.23
79 rdf:rest N8d2a1a2ac2cb4dd2b391567fe05f2e07
80 N48df1f263f0e4fd1816bd4a663f3de8b rdf:first sg:person.014416516426.81
81 rdf:rest rdf:nil
82 N4b8dae0e61774510b23cdde3a77170e2 schema:volumeNumber 53
83 rdf:type schema:PublicationVolume
84 N4f90fa04f08645d79c72a43267855ee3 rdf:first sg:person.01217702577.48
85 rdf:rest Nf441ba1270ca4fbaa9f80e878df0fc1f
86 N7412016e76e8493485c9f1d94cd2e24a schema:name doi
87 schema:value 10.1134/s1063782619040031
88 rdf:type schema:PropertyValue
89 N861bf9f39ee743938f3d738bacb46d17 schema:issueNumber 4
90 rdf:type schema:PublicationIssue
91 N8d2a1a2ac2cb4dd2b391567fe05f2e07 rdf:first sg:person.07632067207.81
92 rdf:rest N48df1f263f0e4fd1816bd4a663f3de8b
93 N94b11de68801447798bc631e44624d27 schema:name Springer Nature - SN SciGraph project
94 rdf:type schema:Organization
95 Nbe8ef6a51646470c9be1a25c935fa69a schema:name dimensions_id
96 schema:value pub.1113939825
97 rdf:type schema:PropertyValue
98 Nf441ba1270ca4fbaa9f80e878df0fc1f rdf:first sg:person.014562362657.70
99 rdf:rest N27237498dff949038454adfe36b35032
100 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
101 schema:name Physical Sciences
102 rdf:type schema:DefinedTerm
103 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
104 schema:name Condensed Matter Physics
105 rdf:type schema:DefinedTerm
106 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
107 schema:name Quantum Physics
108 rdf:type schema:DefinedTerm
109 sg:journal.1136692 schema:issn 1063-7826
110 1090-6479
111 schema:name Semiconductors
112 schema:publisher Pleiades Publishing
113 rdf:type schema:Periodical
114 sg:person.011601005537.23 schema:affiliation grid-institutes:grid.423485.c
115 schema:familyName Lozhkina
116 schema:givenName D. A.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011601005537.23
118 rdf:type schema:Person
119 sg:person.01217702577.48 schema:affiliation grid-institutes:grid.423485.c
120 schema:familyName Nashchekin
121 schema:givenName A. V.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01217702577.48
123 rdf:type schema:Person
124 sg:person.012736206703.22 schema:affiliation grid-institutes:grid.423485.c
125 schema:familyName Voronkov
126 schema:givenName V. B.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012736206703.22
128 rdf:type schema:Person
129 sg:person.014416516426.81 schema:affiliation grid-institutes:grid.423485.c
130 schema:familyName Kukushkina
131 schema:givenName Yu. A.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014416516426.81
133 rdf:type schema:Person
134 sg:person.014562362657.70 schema:affiliation grid-institutes:grid.423485.c
135 schema:familyName Parfeneva
136 schema:givenName A. V.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014562362657.70
138 rdf:type schema:Person
139 sg:person.016627712637.31 schema:affiliation grid-institutes:grid.423485.c
140 schema:familyName Astrova
141 schema:givenName E. V.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016627712637.31
143 rdf:type schema:Person
144 sg:person.07632067207.81 schema:affiliation grid-institutes:grid.423485.c
145 schema:familyName Tomkovich
146 schema:givenName M. V.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07632067207.81
148 rdf:type schema:Person
149 sg:pub.10.1007/bf00355891 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022352441
150 https://doi.org/10.1007/bf00355891
151 rdf:type schema:CreativeWork
152 sg:pub.10.1007/bf00584875 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032782191
153 https://doi.org/10.1007/bf00584875
154 rdf:type schema:CreativeWork
155 sg:pub.10.1038/srep01919 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006040750
156 https://doi.org/10.1038/srep01919
157 rdf:type schema:CreativeWork
158 sg:pub.10.1134/s1063782606100174 schema:sameAs https://app.dimensions.ai/details/publication/pub.1021878645
159 https://doi.org/10.1134/s1063782606100174
160 rdf:type schema:CreativeWork
161 sg:pub.10.1134/s1063782617090032 schema:sameAs https://app.dimensions.ai/details/publication/pub.1091423546
162 https://doi.org/10.1134/s1063782617090032
163 rdf:type schema:CreativeWork
164 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
165 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
166 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...