Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS ... View Full Text


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Article Info

DATE

2019-03

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

Transient process in a resistor–capacitor (RC) circuit with a reverse-biased 4H-SiC p–n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4H-SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results. More... »

PAGES

385-387

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619030072

DOI

http://dx.doi.org/10.1134/s1063782619030072

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1113649769


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