Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers View Full Text


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Article Info

DATE

2019-02

AUTHORS

S. A. Kukushkin, A. M. Mizerov, A. S. Grashchenko, A. V. Osipov, E. V. Nikitina, S. N. Timoshnev, A. D. Bouravlev, M. S. Sobolev

ABSTRACT

The photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer and its optical and photoelectric properties is found. It is experimentally established that the GaN/SiC/Si(111) heterostructure has a higher photosensitivity than the GaN/Si(111) heterostructure. In the GaN/SiC/Si(111) heterostructure, the coexistence of two oppositely directed p–n junctions is observed. One p–n junction forms at the SiC/Si interface and the other, at the GaN/SiC interface. It is shown that the occurrence of an electric barrier in the GaN/Si(111) heterostructure at the GaN/Si(111) heterointerface is caused by the formation of a thin silicon-nitride transition layer during pre-epitaxial plasma nitridation of the Si(111) substrate. More... »

PAGES

180-187

References to SciGraph publications

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  • 2018-09-06. Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution in PHYSICS OF THE SOLID STATE
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  • 2002-07. Mechanism and kinetics of early growth stages of a GaN film in PHYSICS OF THE SOLID STATE
  • 2012-05. Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble in DOKLADY PHYSICS
  • 2017-05-18. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice in SEMICONDUCTORS
  • 2008-07-12. New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment in PHYSICS OF THE SOLID STATE
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    http://scigraph.springernature.com/pub.10.1134/s1063782619020143

    DOI

    http://dx.doi.org/10.1134/s1063782619020143

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