Ontology type: schema:ScholarlyArticle
2019-02
AUTHORSN. Yu. Gordeev, A. S. Payusov, I. S. Mukhin, A. A. Serin, M. M. Kulagina, Yu. A. Guseva, Yu. M. Shernyakov, Yu. M. Zadiranov, M. V. Maximov
ABSTRACTA post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots. More... »
PAGES200-204
http://scigraph.springernature.com/pub.10.1134/s1063782619020106
DOIhttp://dx.doi.org/10.1134/s1063782619020106
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