Ontology type: schema:ScholarlyArticle
2019-01
AUTHORSP. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsentyev, H. Leiste, M. Rinke
ABSTRACTIntegrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate. More... »
PAGES65-71
http://scigraph.springernature.com/pub.10.1134/s1063782619010172
DOIhttp://dx.doi.org/10.1134/s1063782619010172
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