Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2019-01

AUTHORS

P. V. Seredin, D. L. Goloshchapov, D. S. Zolotukhin, A. S. Lenshin, A. N. Lukin, A. M. Mizerov, E. V. Nikitina, I. N. Arsentyev, H. Leiste, M. Rinke

ABSTRACT

Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate. More... »

PAGES

65-71

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782619010172

DOI

http://dx.doi.org/10.1134/s1063782619010172

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1113649731


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Voronezh State University, 394006, Voronezh, Russia", 
          "id": "http://www.grid.ac/institutes/grid.20567.36", 
          "name": [
            "Voronezh State University, 394006, Voronezh, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Seredin", 
        "givenName": "P. V.", 
        "id": "sg:person.011470617720.97", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011470617720.97"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Voronezh State University, 394006, Voronezh, Russia", 
          "id": "http://www.grid.ac/institutes/grid.20567.36", 
          "name": [
            "Voronezh State University, 394006, Voronezh, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Goloshchapov", 
        "givenName": "D. L.", 
        "id": "sg:person.011402214177.21", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011402214177.21"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Voronezh State University, 394006, Voronezh, Russia", 
          "id": "http://www.grid.ac/institutes/grid.20567.36", 
          "name": [
            "Voronezh State University, 394006, Voronezh, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zolotukhin", 
        "givenName": "D. S.", 
        "id": "sg:person.010550766217.11", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010550766217.11"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Voronezh State University, 394006, Voronezh, Russia", 
          "id": "http://www.grid.ac/institutes/grid.20567.36", 
          "name": [
            "Voronezh State University, 394006, Voronezh, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lenshin", 
        "givenName": "A. S.", 
        "id": "sg:person.07357370217.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07357370217.30"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Voronezh State University, 394006, Voronezh, Russia", 
          "id": "http://www.grid.ac/institutes/grid.20567.36", 
          "name": [
            "Voronezh State University, 394006, Voronezh, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lukin", 
        "givenName": "A. N.", 
        "id": "sg:person.016051462720.55", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016051462720.55"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "A. M.", 
        "id": "sg:person.011570622443.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikitina", 
        "givenName": "E. V.", 
        "id": "sg:person.012555247104.74", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Arsentyev", 
        "givenName": "I. N.", 
        "id": "sg:person.014154626406.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014154626406.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany", 
          "id": "http://www.grid.ac/institutes/grid.7892.4", 
          "name": [
            "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Leiste", 
        "givenName": "H.", 
        "id": "sg:person.07703324712.23", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07703324712.23"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany", 
          "id": "http://www.grid.ac/institutes/grid.7892.4", 
          "name": [
            "Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Rinke", 
        "givenName": "M.", 
        "id": "sg:person.015267562567.82", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015267562567.82"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/1.567481", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044075178", 
          "https://doi.org/10.1134/1.567481"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1027451012090078", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022768453", 
          "https://doi.org/10.1134/s1027451012090078"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782614080211", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020148518", 
          "https://doi.org/10.1134/s1063782614080211"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/am.2016.99", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1018830542", 
          "https://doi.org/10.1038/am.2016.99"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782615070210", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1029838334", 
          "https://doi.org/10.1134/s1063782615070210"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063784214020145", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042472887", 
          "https://doi.org/10.1134/s1063784214020145"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s106378261206019x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1041581815", 
          "https://doi.org/10.1134/s106378261206019x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782613010211", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000682174", 
          "https://doi.org/10.1134/s1063782613010211"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2019-01", 
    "datePublishedReg": "2019-01-01", 
    "description": "Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 \u2013xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 \u2013xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 \u2013xN layer. The growth of InxGa1 \u2013xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782619010172", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "53"
      }
    ], 
    "keywords": [
      "optical properties", 
      "buffer layer", 
      "Si substrate", 
      "emission intensity", 
      "single-crystal silicon substrates", 
      "InxGa1-xN layers", 
      "ultraviolet spectroscopy data", 
      "growth of InxGa1", 
      "molecular beam epitaxy", 
      "por-Si layer", 
      "emission lines", 
      "xN layers", 
      "heterostructure samples", 
      "integrated heterostructures", 
      "unrelaxed state", 
      "photoluminescence spectra", 
      "Si buffer layer", 
      "nanocolumn structure", 
      "silicon substrate", 
      "plasma activation", 
      "ray diffraction data", 
      "InxGa1", 
      "spectroscopy data", 
      "nanocolumnar morphology", 
      "film morphology", 
      "heterostructures", 
      "diffraction data", 
      "nanocolumns", 
      "buffer sublayer", 
      "films", 
      "spectroscopic methods", 
      "layer", 
      "substrate", 
      "epitaxy", 
      "intensity", 
      "Raman", 
      "number of advantages", 
      "spectra", 
      "properties", 
      "inference", 
      "morphology", 
      "state", 
      "sublayer", 
      "structure", 
      "number", 
      "lines", 
      "advantages", 
      "nitrogen", 
      "data", 
      "samples", 
      "method", 
      "complexes", 
      "analysis", 
      "growth", 
      "influence", 
      "activation"
    ], 
    "name": "Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 \u2013xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology", 
    "pagination": "65-71", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1113649731"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782619010172"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782619010172", 
      "https://app.dimensions.ai/details/publication/pub.1113649731"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:35", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_823.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782619010172"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782619010172'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782619010172'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782619010172'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782619010172'


 

This table displays all metadata directly associated to this object as RDF triples.

222 TRIPLES      22 PREDICATES      91 URIs      74 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782619010172 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Ned869a5eb9014ae6af796863a28974df
5 schema:citation sg:pub.10.1038/am.2016.99
6 sg:pub.10.1134/1.567481
7 sg:pub.10.1134/s1027451012090078
8 sg:pub.10.1134/s106378261206019x
9 sg:pub.10.1134/s1063782613010211
10 sg:pub.10.1134/s1063782614080211
11 sg:pub.10.1134/s1063782615070210
12 sg:pub.10.1134/s1063784214020145
13 schema:datePublished 2019-01
14 schema:datePublishedReg 2019-01-01
15 schema:description Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.
16 schema:genre article
17 schema:inLanguage en
18 schema:isAccessibleForFree false
19 schema:isPartOf N03156349f380456891e3015ea10aa075
20 N4e26846f26b24932909380f6dc026254
21 sg:journal.1136692
22 schema:keywords InxGa1
23 InxGa1-xN layers
24 Raman
25 Si buffer layer
26 Si substrate
27 activation
28 advantages
29 analysis
30 buffer layer
31 buffer sublayer
32 complexes
33 data
34 diffraction data
35 emission intensity
36 emission lines
37 epitaxy
38 film morphology
39 films
40 growth
41 growth of InxGa1
42 heterostructure samples
43 heterostructures
44 inference
45 influence
46 integrated heterostructures
47 intensity
48 layer
49 lines
50 method
51 molecular beam epitaxy
52 morphology
53 nanocolumn structure
54 nanocolumnar morphology
55 nanocolumns
56 nitrogen
57 number
58 number of advantages
59 optical properties
60 photoluminescence spectra
61 plasma activation
62 por-Si layer
63 properties
64 ray diffraction data
65 samples
66 silicon substrate
67 single-crystal silicon substrates
68 spectra
69 spectroscopic methods
70 spectroscopy data
71 state
72 structure
73 sublayer
74 substrate
75 ultraviolet spectroscopy data
76 unrelaxed state
77 xN layers
78 schema:name Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
79 schema:pagination 65-71
80 schema:productId N47d6d96da43343ef804433c2cc66012a
81 N9b264f24ebf3491b96fc795b8d8c6af3
82 schema:sameAs https://app.dimensions.ai/details/publication/pub.1113649731
83 https://doi.org/10.1134/s1063782619010172
84 schema:sdDatePublished 2022-05-20T07:35
85 schema:sdLicense https://scigraph.springernature.com/explorer/license/
86 schema:sdPublisher Nfd7715dbfbcb48f98f4f158d54efe0b0
87 schema:url https://doi.org/10.1134/s1063782619010172
88 sgo:license sg:explorer/license/
89 sgo:sdDataset articles
90 rdf:type schema:ScholarlyArticle
91 N03156349f380456891e3015ea10aa075 schema:volumeNumber 53
92 rdf:type schema:PublicationVolume
93 N08abefd582db4172bb5037b3757bd980 rdf:first sg:person.07703324712.23
94 rdf:rest N619ab2f121a942789ef8f98b3dbec48f
95 N3f3d5f274fe049fa825c05db6e3701be rdf:first sg:person.011402214177.21
96 rdf:rest Nd2dcbc44d7914a71885229b357552e7c
97 N47d6d96da43343ef804433c2cc66012a schema:name doi
98 schema:value 10.1134/s1063782619010172
99 rdf:type schema:PropertyValue
100 N4e26846f26b24932909380f6dc026254 schema:issueNumber 1
101 rdf:type schema:PublicationIssue
102 N619ab2f121a942789ef8f98b3dbec48f rdf:first sg:person.015267562567.82
103 rdf:rest rdf:nil
104 N772de3b6a2b64806b00681900f8b1246 rdf:first sg:person.011570622443.35
105 rdf:rest Nf55578facb5648e18acc4c3c24549736
106 N9883cc03e690485599aad056c065f195 rdf:first sg:person.014154626406.31
107 rdf:rest N08abefd582db4172bb5037b3757bd980
108 N9b264f24ebf3491b96fc795b8d8c6af3 schema:name dimensions_id
109 schema:value pub.1113649731
110 rdf:type schema:PropertyValue
111 Nab657c1ec6a5452abbdeece003486ee3 rdf:first sg:person.07357370217.30
112 rdf:rest Nbb5da385d0684cc2ae9b61dcb0ba78d9
113 Nbb5da385d0684cc2ae9b61dcb0ba78d9 rdf:first sg:person.016051462720.55
114 rdf:rest N772de3b6a2b64806b00681900f8b1246
115 Nd2dcbc44d7914a71885229b357552e7c rdf:first sg:person.010550766217.11
116 rdf:rest Nab657c1ec6a5452abbdeece003486ee3
117 Ned869a5eb9014ae6af796863a28974df rdf:first sg:person.011470617720.97
118 rdf:rest N3f3d5f274fe049fa825c05db6e3701be
119 Nf55578facb5648e18acc4c3c24549736 rdf:first sg:person.012555247104.74
120 rdf:rest N9883cc03e690485599aad056c065f195
121 Nfd7715dbfbcb48f98f4f158d54efe0b0 schema:name Springer Nature - SN SciGraph project
122 rdf:type schema:Organization
123 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
124 schema:name Physical Sciences
125 rdf:type schema:DefinedTerm
126 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
127 schema:name Condensed Matter Physics
128 rdf:type schema:DefinedTerm
129 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
130 schema:name Quantum Physics
131 rdf:type schema:DefinedTerm
132 sg:journal.1136692 schema:issn 1063-7826
133 1090-6479
134 schema:name Semiconductors
135 schema:publisher Pleiades Publishing
136 rdf:type schema:Periodical
137 sg:person.010550766217.11 schema:affiliation grid-institutes:grid.20567.36
138 schema:familyName Zolotukhin
139 schema:givenName D. S.
140 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010550766217.11
141 rdf:type schema:Person
142 sg:person.011402214177.21 schema:affiliation grid-institutes:grid.20567.36
143 schema:familyName Goloshchapov
144 schema:givenName D. L.
145 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011402214177.21
146 rdf:type schema:Person
147 sg:person.011470617720.97 schema:affiliation grid-institutes:grid.20567.36
148 schema:familyName Seredin
149 schema:givenName P. V.
150 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011470617720.97
151 rdf:type schema:Person
152 sg:person.011570622443.35 schema:affiliation grid-institutes:grid.4886.2
153 schema:familyName Mizerov
154 schema:givenName A. M.
155 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011570622443.35
156 rdf:type schema:Person
157 sg:person.012555247104.74 schema:affiliation grid-institutes:grid.4886.2
158 schema:familyName Nikitina
159 schema:givenName E. V.
160 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012555247104.74
161 rdf:type schema:Person
162 sg:person.014154626406.31 schema:affiliation grid-institutes:grid.423485.c
163 schema:familyName Arsentyev
164 schema:givenName I. N.
165 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014154626406.31
166 rdf:type schema:Person
167 sg:person.015267562567.82 schema:affiliation grid-institutes:grid.7892.4
168 schema:familyName Rinke
169 schema:givenName M.
170 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015267562567.82
171 rdf:type schema:Person
172 sg:person.016051462720.55 schema:affiliation grid-institutes:grid.20567.36
173 schema:familyName Lukin
174 schema:givenName A. N.
175 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016051462720.55
176 rdf:type schema:Person
177 sg:person.07357370217.30 schema:affiliation grid-institutes:grid.20567.36
178 schema:familyName Lenshin
179 schema:givenName A. S.
180 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07357370217.30
181 rdf:type schema:Person
182 sg:person.07703324712.23 schema:affiliation grid-institutes:grid.7892.4
183 schema:familyName Leiste
184 schema:givenName H.
185 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.07703324712.23
186 rdf:type schema:Person
187 sg:pub.10.1038/am.2016.99 schema:sameAs https://app.dimensions.ai/details/publication/pub.1018830542
188 https://doi.org/10.1038/am.2016.99
189 rdf:type schema:CreativeWork
190 sg:pub.10.1134/1.567481 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044075178
191 https://doi.org/10.1134/1.567481
192 rdf:type schema:CreativeWork
193 sg:pub.10.1134/s1027451012090078 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022768453
194 https://doi.org/10.1134/s1027451012090078
195 rdf:type schema:CreativeWork
196 sg:pub.10.1134/s106378261206019x schema:sameAs https://app.dimensions.ai/details/publication/pub.1041581815
197 https://doi.org/10.1134/s106378261206019x
198 rdf:type schema:CreativeWork
199 sg:pub.10.1134/s1063782613010211 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000682174
200 https://doi.org/10.1134/s1063782613010211
201 rdf:type schema:CreativeWork
202 sg:pub.10.1134/s1063782614080211 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020148518
203 https://doi.org/10.1134/s1063782614080211
204 rdf:type schema:CreativeWork
205 sg:pub.10.1134/s1063782615070210 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029838334
206 https://doi.org/10.1134/s1063782615070210
207 rdf:type schema:CreativeWork
208 sg:pub.10.1134/s1063784214020145 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042472887
209 https://doi.org/10.1134/s1063784214020145
210 rdf:type schema:CreativeWork
211 grid-institutes:grid.20567.36 schema:alternateName Voronezh State University, 394006, Voronezh, Russia
212 schema:name Voronezh State University, 394006, Voronezh, Russia
213 rdf:type schema:Organization
214 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, 194021, St. Petersburg, Russia
215 schema:name Ioffe Institute, 194021, St. Petersburg, Russia
216 rdf:type schema:Organization
217 grid-institutes:grid.4886.2 schema:alternateName St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
218 schema:name St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
219 rdf:type schema:Organization
220 grid-institutes:grid.7892.4 schema:alternateName Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany
221 schema:name Karlsruhe Nano Micro Facility, 76344, Eggenstein-Leopoldshafen, Germany
222 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...