Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

A. A. Spirina, A. G. Nastovjak, I. G. Neizvestny, N. L. Shwartz

ABSTRACT

A kinetic lattice Monte Carlo model is used to study the Ga droplets self-propelled motion along GaAs(111)A and (111)B surfaces during the initial stage of high-temperature annealing. An estimation of the droplet velocity, running along (111)A and (111)B surfaces, in a wide temperature range, is carried out. The mechanism of small Ga drops movement during high-temperature annealing is suggested. Different directions of droplets motion and the morphology of drop-crystal interface on (111)A and (111)B substrates are determined by a difference in the etching rate of (111)A and (111)B facets by liquid gallium. It is shown that metal droplets can cause step bunching. More... »

PAGES

2135-2139

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618160340

DOI

http://dx.doi.org/10.1134/s1063782618160340

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112394973


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia", 
            "Novosibirsk State Technical University, 630073, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Spirina", 
        "givenName": "A. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Siberian Branch of the Russian Academy of Sciences", 
          "id": "https://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nastovjak", 
        "givenName": "A. G.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia", 
            "Novosibirsk State Technical University, 630073, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Neizvestny", 
        "givenName": "I. G.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Novosibirsk State Technical University", 
          "id": "https://www.grid.ac/institutes/grid.77667.37", 
          "name": [
            "A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia", 
            "Novosibirsk State Technical University, 630073, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Shwartz", 
        "givenName": "N. L.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1995078009030094", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050480733", 
          "https://doi.org/10.1134/s1995078009030094"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1995078009030094", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050480733", 
          "https://doi.org/10.1134/s1995078009030094"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/am200538x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055141724"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/am402455u", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1055144001"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl9011886", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056221939"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1021/nl9011886", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1056221939"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1676789", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057752946"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3684616", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058000432"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.4749401", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1058058919"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.105.035702", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060757227"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevlett.105.035702", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060757227"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1169546", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062459343"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1126/science.1169546", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1062459343"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782618050226", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1103413906", 
          "https://doi.org/10.1134/s1063782618050226"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-12", 
    "datePublishedReg": "2018-12-01", 
    "description": "A kinetic lattice Monte Carlo model is used to study the Ga droplets self-propelled motion along GaAs(111)A and (111)B surfaces during the initial stage of high-temperature annealing. An estimation of the droplet velocity, running along (111)A and (111)B surfaces, in a wide temperature range, is carried out. The mechanism of small Ga drops movement during high-temperature annealing is suggested. Different directions of droplets motion and the morphology of drop-crystal interface on (111)A and (111)B substrates are determined by a difference in the etching rate of (111)A and (111)B facets by liquid gallium. It is shown that metal droplets can cause step bunching.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782618160340", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isFundedItemOf": [
      {
        "id": "sg:grant.7596106", 
        "type": "MonetaryGrant"
      }
    ], 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "16", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "name": "Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation", 
    "pagination": "2135-2139", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "a9ed66e9bde88334fbd35873bb0dab68b440a66e19cd1db30bbc0bf56e737d73"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618160340"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112394973"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618160340", 
      "https://app.dimensions.ai/details/publication/pub.1112394973"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T09:54", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000347_0000000347/records_89798_00000004.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1134%2FS1063782618160340"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160340'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160340'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160340'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160340'


 

This table displays all metadata directly associated to this object as RDF triples.

116 TRIPLES      21 PREDICATES      37 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618160340 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N79d02043804f46e69e6295d8fdb08d17
4 schema:citation sg:pub.10.1134/s1063782618050226
5 sg:pub.10.1134/s1995078009030094
6 https://doi.org/10.1021/am200538x
7 https://doi.org/10.1021/am402455u
8 https://doi.org/10.1021/nl9011886
9 https://doi.org/10.1063/1.1676789
10 https://doi.org/10.1063/1.3684616
11 https://doi.org/10.1063/1.4749401
12 https://doi.org/10.1103/physrevlett.105.035702
13 https://doi.org/10.1126/science.1169546
14 schema:datePublished 2018-12
15 schema:datePublishedReg 2018-12-01
16 schema:description A kinetic lattice Monte Carlo model is used to study the Ga droplets self-propelled motion along GaAs(111)A and (111)B surfaces during the initial stage of high-temperature annealing. An estimation of the droplet velocity, running along (111)A and (111)B surfaces, in a wide temperature range, is carried out. The mechanism of small Ga drops movement during high-temperature annealing is suggested. Different directions of droplets motion and the morphology of drop-crystal interface on (111)A and (111)B substrates are determined by a difference in the etching rate of (111)A and (111)B facets by liquid gallium. It is shown that metal droplets can cause step bunching.
17 schema:genre research_article
18 schema:inLanguage en
19 schema:isAccessibleForFree false
20 schema:isPartOf N65dc3da9bf5f4840bd35cd6880d9b84c
21 Nf33a4f9d113547b096fd0f1a33897ddc
22 sg:journal.1136692
23 schema:name Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation
24 schema:pagination 2135-2139
25 schema:productId N17bdc5e680b249e08c4211982dd3adb6
26 N867c79dbb0cd451693ef1176e60a2d01
27 N876a2ab4cdd141058d9649c2d693c1f5
28 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112394973
29 https://doi.org/10.1134/s1063782618160340
30 schema:sdDatePublished 2019-04-11T09:54
31 schema:sdLicense https://scigraph.springernature.com/explorer/license/
32 schema:sdPublisher N884f9d9d97874448bda53dfce529d862
33 schema:url https://link.springer.com/10.1134%2FS1063782618160340
34 sgo:license sg:explorer/license/
35 sgo:sdDataset articles
36 rdf:type schema:ScholarlyArticle
37 N093c37da2acf42bf8a5c864ae5d1bef5 schema:affiliation https://www.grid.ac/institutes/grid.77667.37
38 schema:familyName Shwartz
39 schema:givenName N. L.
40 rdf:type schema:Person
41 N16b82f4de3c546edbe66de1c417b654f rdf:first Naa8dfeeda1f8428f8b8ae3b1fae9563f
42 rdf:rest Na4256504911447c59611e61cb252d9b1
43 N17bdc5e680b249e08c4211982dd3adb6 schema:name doi
44 schema:value 10.1134/s1063782618160340
45 rdf:type schema:PropertyValue
46 N5986e164407849eb8b0cbbaa4951f1ae schema:affiliation https://www.grid.ac/institutes/grid.77667.37
47 schema:familyName Spirina
48 schema:givenName A. A.
49 rdf:type schema:Person
50 N65dc3da9bf5f4840bd35cd6880d9b84c schema:volumeNumber 52
51 rdf:type schema:PublicationVolume
52 N79d02043804f46e69e6295d8fdb08d17 rdf:first N5986e164407849eb8b0cbbaa4951f1ae
53 rdf:rest Ne5ce83acc0db44e2a9f7da4be67d0b80
54 N867c79dbb0cd451693ef1176e60a2d01 schema:name dimensions_id
55 schema:value pub.1112394973
56 rdf:type schema:PropertyValue
57 N876a2ab4cdd141058d9649c2d693c1f5 schema:name readcube_id
58 schema:value a9ed66e9bde88334fbd35873bb0dab68b440a66e19cd1db30bbc0bf56e737d73
59 rdf:type schema:PropertyValue
60 N884f9d9d97874448bda53dfce529d862 schema:name Springer Nature - SN SciGraph project
61 rdf:type schema:Organization
62 Na0bf83b18eb44db782d2b6078e54876a schema:affiliation https://www.grid.ac/institutes/grid.415877.8
63 schema:familyName Nastovjak
64 schema:givenName A. G.
65 rdf:type schema:Person
66 Na4256504911447c59611e61cb252d9b1 rdf:first N093c37da2acf42bf8a5c864ae5d1bef5
67 rdf:rest rdf:nil
68 Naa8dfeeda1f8428f8b8ae3b1fae9563f schema:affiliation https://www.grid.ac/institutes/grid.77667.37
69 schema:familyName Neizvestny
70 schema:givenName I. G.
71 rdf:type schema:Person
72 Ne5ce83acc0db44e2a9f7da4be67d0b80 rdf:first Na0bf83b18eb44db782d2b6078e54876a
73 rdf:rest N16b82f4de3c546edbe66de1c417b654f
74 Nf33a4f9d113547b096fd0f1a33897ddc schema:issueNumber 16
75 rdf:type schema:PublicationIssue
76 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
77 schema:name Engineering
78 rdf:type schema:DefinedTerm
79 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
80 schema:name Materials Engineering
81 rdf:type schema:DefinedTerm
82 sg:grant.7596106 http://pending.schema.org/fundedItem sg:pub.10.1134/s1063782618160340
83 rdf:type schema:MonetaryGrant
84 sg:journal.1136692 schema:issn 1063-7826
85 1090-6479
86 schema:name Semiconductors
87 rdf:type schema:Periodical
88 sg:pub.10.1134/s1063782618050226 schema:sameAs https://app.dimensions.ai/details/publication/pub.1103413906
89 https://doi.org/10.1134/s1063782618050226
90 rdf:type schema:CreativeWork
91 sg:pub.10.1134/s1995078009030094 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050480733
92 https://doi.org/10.1134/s1995078009030094
93 rdf:type schema:CreativeWork
94 https://doi.org/10.1021/am200538x schema:sameAs https://app.dimensions.ai/details/publication/pub.1055141724
95 rdf:type schema:CreativeWork
96 https://doi.org/10.1021/am402455u schema:sameAs https://app.dimensions.ai/details/publication/pub.1055144001
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1021/nl9011886 schema:sameAs https://app.dimensions.ai/details/publication/pub.1056221939
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1063/1.1676789 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057752946
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1063/1.3684616 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058000432
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1063/1.4749401 schema:sameAs https://app.dimensions.ai/details/publication/pub.1058058919
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1103/physrevlett.105.035702 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060757227
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1126/science.1169546 schema:sameAs https://app.dimensions.ai/details/publication/pub.1062459343
109 rdf:type schema:CreativeWork
110 https://www.grid.ac/institutes/grid.415877.8 schema:alternateName Siberian Branch of the Russian Academy of Sciences
111 schema:name A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia
112 rdf:type schema:Organization
113 https://www.grid.ac/institutes/grid.77667.37 schema:alternateName Novosibirsk State Technical University
114 schema:name A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia
115 Novosibirsk State Technical University, 630073, Novosibirsk, Russia
116 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...