Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

M. S. Sobolev, A. A. Lazarenko, A. M. Mizerov, E. V. Nikitina, E. V. Pirogov, S. N. Timoshnev, A. D. Bouravleuv

ABSTRACT

The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate. More... »

PAGES

2128-2131

Journal

TITLE

Semiconductors

ISSUE

16

VOLUME

52

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618160327

DOI

http://dx.doi.org/10.1134/s1063782618160327

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112391295


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sobolev", 
        "givenName": "M. S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lazarenko", 
        "givenName": "A. A.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mizerov", 
        "givenName": "A. M.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikitina", 
        "givenName": "E. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pirogov", 
        "givenName": "E. V.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Timoshnev", 
        "givenName": "S. N.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Saint Petersburg State University", 
          "id": "https://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
            "St. Petersburg Electrotechnical University, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouravleuv", 
        "givenName": "A. D.", 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.jcrysgro.2008.07.073", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000534155"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.jcrysgro.2006.11.021", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012474100"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1002/pssa.200674774", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034048218"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1149/1.2108651", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048745813"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/jjap.36.5431", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063058082"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2018-12", 
    "datePublishedReg": "2018-12-01", 
    "description": "The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p\u2013n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782618160327", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "16", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "52"
      }
    ], 
    "name": "Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy", 
    "pagination": "2128-2131", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "5419947285043de4bda888595d63d38060a6b2b7dd13029d070aa20ec19150fb"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782618160327"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1112391295"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782618160327", 
      "https://app.dimensions.ai/details/publication/pub.1112391295"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-11T09:56", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000347_0000000347/records_89804_00000004.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://link.springer.com/10.1134%2FS1063782618160327"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160327'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160327'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160327'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782618160327'


 

This table displays all metadata directly associated to this object as RDF triples.

124 TRIPLES      21 PREDICATES      32 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782618160327 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N526283ed60a140b398b10b93d197b7a8
4 schema:citation https://doi.org/10.1002/pssa.200674774
5 https://doi.org/10.1016/j.jcrysgro.2006.11.021
6 https://doi.org/10.1016/j.jcrysgro.2008.07.073
7 https://doi.org/10.1143/jjap.36.5431
8 https://doi.org/10.1149/1.2108651
9 schema:datePublished 2018-12
10 schema:datePublishedReg 2018-12-01
11 schema:description The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate.
12 schema:genre research_article
13 schema:inLanguage en
14 schema:isAccessibleForFree false
15 schema:isPartOf N08ee121008e34ca3a7c29ce7e6af1205
16 Nc97179e7a2214dba8c4464746dd634bc
17 sg:journal.1136692
18 schema:name Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
19 schema:pagination 2128-2131
20 schema:productId N2c44e1505eb54e9ba215bebb42cfb738
21 Naff80b8d4e884623807a22e37d9180c5
22 Nc3d5e9ea010d415abfcb395f5f073195
23 schema:sameAs https://app.dimensions.ai/details/publication/pub.1112391295
24 https://doi.org/10.1134/s1063782618160327
25 schema:sdDatePublished 2019-04-11T09:56
26 schema:sdLicense https://scigraph.springernature.com/explorer/license/
27 schema:sdPublisher N6de60e4aa3b947558e4c440331ce4921
28 schema:url https://link.springer.com/10.1134%2FS1063782618160327
29 sgo:license sg:explorer/license/
30 sgo:sdDataset articles
31 rdf:type schema:ScholarlyArticle
32 N08ee121008e34ca3a7c29ce7e6af1205 schema:issueNumber 16
33 rdf:type schema:PublicationIssue
34 N0eb0085cb28e4a0da034f35985e3768a schema:affiliation N489979122d1044848e09f27d9fa5408c
35 schema:familyName Timoshnev
36 schema:givenName S. N.
37 rdf:type schema:Person
38 N1eff1248d92d4144b66852e2bbbd7e99 schema:affiliation Ncf66e3360a2744fd9338b89649c8ab9c
39 schema:familyName Sobolev
40 schema:givenName M. S.
41 rdf:type schema:Person
42 N265d5771899346a4b454814c35338fa0 rdf:first N0eb0085cb28e4a0da034f35985e3768a
43 rdf:rest Nc46084c190724eacb4f358912f2b7cf2
44 N26a391eef1234c209c19e47fd01b84a2 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
45 rdf:type schema:Organization
46 N271310035f7545bfb48fee9401b003aa schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
47 rdf:type schema:Organization
48 N2c44e1505eb54e9ba215bebb42cfb738 schema:name dimensions_id
49 schema:value pub.1112391295
50 rdf:type schema:PropertyValue
51 N489979122d1044848e09f27d9fa5408c schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
52 rdf:type schema:Organization
53 N493944d2cbcd49209ddb64455eae2cdd schema:affiliation N5eb7a0d6421a41f8a387c2b12b36a5b0
54 schema:familyName Nikitina
55 schema:givenName E. V.
56 rdf:type schema:Person
57 N4eb550ddf0f24b4db7e828685653edce rdf:first N493944d2cbcd49209ddb64455eae2cdd
58 rdf:rest N83246bd11f0a4120b105d3cfbf119eac
59 N526283ed60a140b398b10b93d197b7a8 rdf:first N1eff1248d92d4144b66852e2bbbd7e99
60 rdf:rest N58aa7344edb54b63a1711b95b907e7ef
61 N58aa7344edb54b63a1711b95b907e7ef rdf:first N99ccfc390244407690db3671867ea713
62 rdf:rest N5ed93a11483a4409b9583a58bb4e8851
63 N5eb7a0d6421a41f8a387c2b12b36a5b0 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
64 rdf:type schema:Organization
65 N5ed93a11483a4409b9583a58bb4e8851 rdf:first Nf26802e0f8ac4f789ff14537c69f1e1d
66 rdf:rest N4eb550ddf0f24b4db7e828685653edce
67 N5f8af1f56f834f5d8ee5d90a9f188ac9 schema:affiliation https://www.grid.ac/institutes/grid.15447.33
68 schema:familyName Bouravleuv
69 schema:givenName A. D.
70 rdf:type schema:Person
71 N6de60e4aa3b947558e4c440331ce4921 schema:name Springer Nature - SN SciGraph project
72 rdf:type schema:Organization
73 N83246bd11f0a4120b105d3cfbf119eac rdf:first N870d9dcfa2064b6a8e1e4101972669be
74 rdf:rest N265d5771899346a4b454814c35338fa0
75 N870d9dcfa2064b6a8e1e4101972669be schema:affiliation N271310035f7545bfb48fee9401b003aa
76 schema:familyName Pirogov
77 schema:givenName E. V.
78 rdf:type schema:Person
79 N99ccfc390244407690db3671867ea713 schema:affiliation N26a391eef1234c209c19e47fd01b84a2
80 schema:familyName Lazarenko
81 schema:givenName A. A.
82 rdf:type schema:Person
83 Naff80b8d4e884623807a22e37d9180c5 schema:name readcube_id
84 schema:value 5419947285043de4bda888595d63d38060a6b2b7dd13029d070aa20ec19150fb
85 rdf:type schema:PropertyValue
86 Nc11225eed4eb474a9c760e3052d62482 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
87 rdf:type schema:Organization
88 Nc3d5e9ea010d415abfcb395f5f073195 schema:name doi
89 schema:value 10.1134/s1063782618160327
90 rdf:type schema:PropertyValue
91 Nc46084c190724eacb4f358912f2b7cf2 rdf:first N5f8af1f56f834f5d8ee5d90a9f188ac9
92 rdf:rest rdf:nil
93 Nc97179e7a2214dba8c4464746dd634bc schema:volumeNumber 52
94 rdf:type schema:PublicationVolume
95 Ncf66e3360a2744fd9338b89649c8ab9c schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
96 rdf:type schema:Organization
97 Nf26802e0f8ac4f789ff14537c69f1e1d schema:affiliation Nc11225eed4eb474a9c760e3052d62482
98 schema:familyName Mizerov
99 schema:givenName A. M.
100 rdf:type schema:Person
101 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
102 schema:name Engineering
103 rdf:type schema:DefinedTerm
104 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
105 schema:name Materials Engineering
106 rdf:type schema:DefinedTerm
107 sg:journal.1136692 schema:issn 1063-7826
108 1090-6479
109 schema:name Semiconductors
110 rdf:type schema:Periodical
111 https://doi.org/10.1002/pssa.200674774 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034048218
112 rdf:type schema:CreativeWork
113 https://doi.org/10.1016/j.jcrysgro.2006.11.021 schema:sameAs https://app.dimensions.ai/details/publication/pub.1012474100
114 rdf:type schema:CreativeWork
115 https://doi.org/10.1016/j.jcrysgro.2008.07.073 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000534155
116 rdf:type schema:CreativeWork
117 https://doi.org/10.1143/jjap.36.5431 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063058082
118 rdf:type schema:CreativeWork
119 https://doi.org/10.1149/1.2108651 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048745813
120 rdf:type schema:CreativeWork
121 https://www.grid.ac/institutes/grid.15447.33 schema:alternateName Saint Petersburg State University
122 schema:name St. Petersburg Academic University, 194021, St. Petersburg, Russia
123 St. Petersburg Electrotechnical University, 197376, St. Petersburg, Russia
124 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...