Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

M. S. Sobolev, A. A. Lazarenko, A. M. Mizerov, E. V. Nikitina, E. V. Pirogov, S. N. Timoshnev, A. D. Bouravleuv

ABSTRACT

The growth of single crystalline GaP nucleation and buffer layers on Si substrates by molecular-beam epitaxy is demonstrated. The use of two different regimes of migration-enhanced epitaxy was studied. It was found that p–n junctions can be created due to the interdiffusion during the growth of GaP layer on p-type Si substrate. More... »

PAGES

2128-2131

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618160327

DOI

http://dx.doi.org/10.1134/s1063782618160327

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112391295


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