Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

K. Yu. Shubina, T. N. Berezovskaya, D. V. Mokhov, I. A. Morozov, K. P. Kotlyar, A. M. Mizerov, E. V. Nikitina, A. D. Bouravleuv

ABSTRACT

Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate. More... »

PAGES

2117-2119

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618160297

DOI

http://dx.doi.org/10.1134/s1063782618160297

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112389043


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