Critical Radius of Full Depletion in Semiconductor Nanowires Caused by Surface Charge Trapping View Full Text


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Article Info

DATE

2018-12

AUTHORS

S. G. Petrosyan, A. E. Yesayan, S. R. Nersesyan, V. A. Khachatryan

ABSTRACT

We have presented a simple analytical model for estimating critical radius of full depletion in semiconductor nanowires due to charge carrier transport from volume to the surface states and radial band bending associated with screening of trapped surface charges. The model describes the critical radius functional dependences on doping level, surface states parameters and appears as a very useful tool to understand transport properties of nanowires limited particularly by surface states effects. More... »

PAGES

2022-2025

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618160236

DOI

http://dx.doi.org/10.1134/s1063782618160236

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1112398060


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