Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12

AUTHORS

A. D. Bolshakov, L. N. Dvoretckaia, V. V. Fedorov, G. A. Sapunov, A. M. Mozharov, K. Yu. Shugurov, V. A. Shkoldin, M. S. Mukhin, G. E. Cirlin, I. S. Mukhin

ABSTRACT

In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fabrication method on a base of the photolithography process over an array of microspherical lenses has been studied theoretically and then optimized in order to obtain the nanostructures with controlled morphology. It was found that the positive resist thickness corresponding to the best achievable resolution in the subwavelength region is 250 nm in case of 1.5 μm silica spheres and excitation with 365 nm LED. The silica growth mask for selective epitaxy was fabricated. The ordered array of GaP nanowires was synthesized with MBE. Large scale ordering and selectivity of the growth technique is demonstrated. More... »

PAGES

2088-2091

Journal

TITLE

Semiconductors

ISSUE

16

VOLUME

52

Author Affiliations

From Grant

  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s1063782618160054

    DOI

    http://dx.doi.org/10.1134/s1063782618160054

    DIMENSIONS

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