Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12-27

AUTHORS

A. V. Sakharov, W. V. Lundin, E. E. Zavarin, D. A. Zakheim, S. O. Usov, A. F. Tsatsulnikov, M. A. Yagovkina, P. E. Sim, O. I. Demchenko, N. Y. Kurbanova, L. E. Velikovskiy

ABSTRACT

InAlN/AlN/GaN semiconductor heterostructures with a barrier thickness of 5–13 nm have been grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire and SiC substrates. Optimization of GaN buffer and InAlN layers allows fabricating structures with sheet conductivity values below 210 Ohm/sq. High electron mobility transistors (HEMTs) fabricated from such structures show drain current value exceeding 1.25 A/mm with maximum transconductance of 450 mS/mm. Use of thin in situ Si3N4 capping allows to fabricate and compare HEMT and MIS-HEMTs. More... »

PAGES

1843-1845

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618140257

DOI

http://dx.doi.org/10.1134/s1063782618140257

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110933752


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185 grid-institutes:grid.77602.34 schema:alternateName Tomsk State University, Tomsk, Russia
186 schema:name Tomsk State University, Tomsk, Russia
187 rdf:type schema:Organization
 




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