Diode Lasers with Near-Surface Active Region View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12-27

AUTHORS

A. S. Payusov, N. Yu. Gordeev, A. A. Serin, M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maximov, A. E. Zhukov

ABSTRACT

Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10–3 K/(W cm2). More... »

PAGES

1901-1904

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618140233

DOI

http://dx.doi.org/10.1134/s1063782618140233

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110933750


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