Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12-27

AUTHORS

D. V. Lebedev, A. S. Vlasov, M. M. Kulagina, S. I. Troshkov, Yu. A. Guseva, E. Pelucchi, A. Gocalinska, G. Juska, A. Yu. Romanova, P. A. Buriak, V. I. Smirnov, A. V. Shelaev, V. A. Bykov, A. M. Mintairov

ABSTRACT

We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C. More... »

PAGES

1894-1897

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618140166

DOI

http://dx.doi.org/10.1134/s1063782618140166

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110933743


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