High Quality Graphene Grown by Sublimation on 4H-SiC (0001) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2018-12-27

AUTHORS

A. A. Lebedev, V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, I. A. Eliseyev, M. S. Dunaevskiy, E. V. Gushchina, K. A. Bokai, J. Pezoldt

ABSTRACT

The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s). More... »

PAGES

1882-1885

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782618140154

DOI

http://dx.doi.org/10.1134/s1063782618140154

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1110933742


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